Photodetection application of one-step synthesized wafer-scale monolayer MoS₂ by chemical vapor deposition

Abstract

Monolayer MoS2 is a known candidate to replace silicon-based materials for photodetection purposes. Achieving industrial production and application of MoS2 calls for efficient and economic synthesis of such material. Here, we report a one-step and low-cost chemical vapor deposition method for the controlled synthesis of high quality and uniform wafer-scale (approximately 9.5 × 4.5 cm) monolayer MoS2 film on SiO2/Si substrates. Using the as-synthesized MoS2 films, MoS2/PbS quantum dot hybrid device arrays are also fabricated. These hybrid devices have broad spectral photoresponse (457–1064 nm), rapid response rate, high responsivity of approximately 1.8 × 104 A W−1, and ultrahigh detectivity of approximately 7.6 × 1013 Jones, which outperforms other pristine two-dimensional as well as commercial Si and InGaAs materials. This low-cost and efficient method of growing wafer-scale monolayer MoS2, as well as the excellent performance of its hybrid device arrays, will strongly support the production and application of monolayer MoS2 in the future.

High‐Performance Broadband Photodetectors of Heterogeneous 2D Inorganic Molecular Sb2O3/Monolayer MoS2 Crystals Grown via Chemical Vapor Deposition

“…It was exponentially decreased upon increasing P , and a remarkably high responsivity of 1.1 × 10 4 , 5.3 × 10 4 , 4.5 × 10 4 , 3 × 10 4 , 2.8, and 7.8 A W −1 was achieved for the excitations of 360, 457, 532, 671, 914, and 1064 nm, respectively. These values are superior to the pure, [ 47–48 ] and among the top level of photodetectors based on sensitized monolayer MoS 2 [ 49 ] and other 2D materials, [ 50 ] and also being great advantage over the photodetector (see Table S1, Supporting Information for more comparison). The high responsivity and wide spectral range observed for FET‐21% phototransistor are attributed to the efficient charge transfer at the interface of Sb 2 O 3 /MoS 2 and the infinite absorbance from ultraviolet to the infrared regime (Figure 1e).…”

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

“…Research activities on MoS 2 based photodetectors is emerging on a fast pace. [446][447][448][449][450][451] The large family of 2D materials can be explored for developing photodetection devices. For example, 2D TMDs such as MoSe 2 , MoTe 2 , WS 2 , WSe 2 , PtS 2 , PtSe 2 , PtTe 2 , PdS 2 , PdSe 2 , PdTe 2 , GeS 2 , GeSe 2 , HfS 2 , TiS 2 , FeS 2 , CoS 2 , NiS 2 , SnS 2 , MoSe 2 , NbSe 2 , TaSe 2 , NiSe 2 , FeSe 2 , and CoSe 2 can be explored for developing new vdWHs for high-performance photodetectors.…”

Grain-boundary-rich 2D materials for attomolar-ability biochemical sensors

“…Centimeter-scale polycrystalline monolayer (1L) WS 2 lms with the presence of high-surface-density grain boundaries (GBs) were successfully synthesized on SiO 2 (300 nm)/Si substrates in a home-made CVD system as reported in our previous works 61,62 , which are con rmed by measurements of optical microscopy (OM), uorescence (FL), atomic force microscopy (AFM), Raman and photoluminescence (PL) (see Supplementary Figs. S1, 2, and details about CVD growth and characterization of OM, FL, AFM, Raman and PL).…”

“…Several groups have reported the successful growth of large-area, even wafer-scale, polycrystalline monolayer (1L) TMDs lms. [60][61][62][63][64] In our previous work, controllable and reproducible CVD growth of wafer-scale polycrystalline 1L W(Mo)S 2 lms has been successfully achieved. 61,62 The obtained lm is composed of grains with an average size of less than 100 nm, implying the presence of GBs at high surface density.…”

“…[60][61][62][63][64] In our previous work, controllable and reproducible CVD growth of wafer-scale polycrystalline 1L W(Mo)S 2 lms has been successfully achieved. 61,62 The obtained lm is composed of grains with an average size of less than 100 nm, implying the presence of GBs at high surface density. Here, we propose the potential application of CVD-grown polycrystalline1L Mo(W)S 2 lms as biochemical sensors with superior sensitivity, high selectivity and ultra-low limit of detection.…”