High‐Performance Broadband Photodetectors of Heterogeneous 2D Inorganic Molecular Sb₂O₃/Monolayer MoS₂ Crystals Grown via Chemical Vapor Deposition

Abstract

The newly emerged 2D materials heterostructures, including layered and nonlayered structures, are regarded as the building blocks for future high performance optoelectronic devices. However, it still remains a great challenge to directly synthesize 2D heterostructures for realizing broadband detection in photodetectors. In this work, the growth of vertically stacked inorganic molecular Sb2O3/monolayer MoS2 heterostructures through a two‐step chemical vapor deposition method is demonstrated, and high performance ultraviolet/near‐infrared photodetectors based on the achieved heterostructures are further developed. Excellent responsivity of 5.3 × 104 A W−1 and detectivity of 2.0 × 1015 Jones are obtained under 457 nm illumination. Additionally, the photodetection range can be extended to near‐infrared region. Maximum responsivity of 7.8 A W−1, detectivity of 3.4 × 1011 Jones, and fast response speed (<60 ms) are obtained under 1064 nm laser illumination at room temperature, which is far superior to those of the previously reported ultra‐thin 2D van de Waals heterostructures. The inorganic molecular Sb2O3/monolayer MoS2 heterostructures enrich the family of 2D materials heterostructures, showing potential applications in high performance functional electronics and optoelectronics.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

“…Singh et al 371 reported Pd/Al 2 O 3 /MoS 2 /ITO photodetector showing photoresponsivity of 488 A W À1 , detectivity of 8.22 Â 10 12 Jones and EQE of 1.9 Â 10 5 % at 308 nm wavelength under laser light intensity of 13.6 mW/cm 2 with 1 V applied bias voltage. Ye et al 372 demonstrated vertical growth of Sb 2 O 3 akes on monolayer MoS 2 crystals by using CVD technique. The Sb 2 O 3 akes of different thickness and size covered monolayer MoS 2 crystals in 10, 21, 44, 54 and 100% ratio and their based backgated FETs fabricated on SiO 2 /Si wafer affected the carrier mobility and subthreshold swing (SS) of the Sb 2 O 3 /MoS 2 hybrid photodetectors.…”

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

“…However, an inverse movement occurs at a lower temperature ( T = 80 K); namely, the holes accumulate in a colloidal PbS quantum dot (QD) while electrons transfer to the graphene channel . This temperature-drive carrier transfer process increases the trapping time, which is beneficial for higher photoresponsivity and photoconductive gain. , …”

“…294 This temperature-drive carrier transfer process increases the trapping time, which is beneficial for higher photoresponsivity and photoconductive gain. 162,295 (2) Photogating Effect. The photogating effect is a way of light-induced modification in carrier density and channel conductance, which is ascribed to the additional gate voltage caused by trap charges at the interface.…”

2D tribotronic transistors

“…The WS 2 has the smallest piezoelectric effect, and moving downward in group 6 (transition metals) or group 16 (chalcogenides) enhances the magnitude of the effect until MoTe 2 , with the largest coefficient, is reached. The 2D materials can withstand huge strains with high crystallinity, which are the research hotspots of high-performance piezoelectric materials [51][52][53]. Wu et al first proposed the piezoelectric performance of a single-layer MoS 2 -based device coupled with an external load resistor (figure 3(d)-(i)) [54].…”