Monolayer MoS2 is a known candidate to replace silicon-based materials for photodetection purposes. Achieving industrial production and application of MoS2 calls for efficient and economic synthesis of such material. Here, we report a one-step and low-cost chemical vapor deposition method for the controlled synthesis of high quality and uniform wafer-scale (approximately 9.5 × 4.5 cm) monolayer MoS2 film on SiO2/Si substrates. Using the as-synthesized MoS2 films, MoS2/PbS quantum dot hybrid device arrays are also fabricated. These hybrid devices have broad spectral photoresponse (457–1064 nm), rapid response rate, high responsivity of approximately 1.8 × 104 A W−1, and ultrahigh detectivity of approximately 7.6 × 1013 Jones, which outperforms other pristine two-dimensional as well as commercial Si and InGaAs materials. This low-cost and efficient method of growing wafer-scale monolayer MoS2, as well as the excellent performance of its hybrid device arrays, will strongly support the production and application of monolayer MoS2 in the future.
2D materials with low symmetry are explored in recent years because of their anisotropic advantage in polarization‐sensitive photodetection. Herein the controllably grown hexagonal magnetic semiconducting α‐MnTe nanoribbons are reported with a highly anisotropic (100) surface and their high sensitivity to polarization in a broadband photodetection, whereas the hexagonal structure is highly symmetric. The outstanding photoresponse of α‐MnTe nanoribbons occurs in a broadband range from ultraviolet (UV, 360 nm) to near infrared (NIR, 914 nm) with short response times of 46 ms (rise) and 37 ms (fall), excellent environmental stability, and repeatability. Furthermore, due to highly anisotropic (100) surface, the α‐MnTe nanoribbons as photodetector exhibit attractive sensitivity to polarization and high dichroic ratios of up to 2.8 under light illumination of UV‐to‐NIR wavelengths. These results demonstrate that 2D magnetic semiconducting α‐MnTe nanoribbons provide a promising platform to design the next‐generation polarization‐sensitive photodetectors in a broadband range.
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