Photoconductivity Spectra of n‐type CuInSe<sub>2</sub> Single Crystals

Slifkin, M.A.; Al‐Rahmani, A.; Imanieh, M.; Tomlinson, R. D.; Neumann, H.

doi:10.1002/crat.2170260119

Cited by 21 publications

(2 citation statements)

References 30 publications

(13 reference statements)

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“…T hin ‐ film solar cells have been extensively developed as the second‐generation solar cells for the increased energy requirements. The ternary compound of copper indium diselenide (CuInSe 2 ) with the chalcopyrite structure is considered to be a good material for the absorber layer in the thin‐film solar cell due to the direct band gap structure and high absorption coefficient (of the order of 10 5 ) 1 . The maximum photovoltaic conversion efficiency of Cu(In,Ga)Se 2 ‐based solar cells is 19.9% as reported by NREL 2 …”

Section: Introductionmentioning

confidence: 99%

Microwave‐Assisted Solvothermal Synthesis of Copper Indium Diselenide Powders

Lee

2010

Journal of the American Ceramic Society

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Copper indium diselenide (CuInSe 2 ) powders were successfully synthesized using the microwave-assisted solvothermal process at 2001C within a short time. The reaction time for preparing singlephased CuInSe 2 was significantly shortened with the developed microwave treatment. The microwave field enhanced the mobility of the reactants, thereby resulting in an accelerated reaction rate. CuSe was the major intermediate product during these reactions and the CuInSe 2 phase was gradually formed as the reaction temperature and time were increased. The prepared powders exhibited plate-like and spherical shapes, and the fraction of plate was increased with increasing reaction time. The solvothermal route combined with the microwave heating system was found to significantly promote the formation of plate-like particles.

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Section: Introductionmentioning

confidence: 99%

Microwave‐Assisted Solvothermal Synthesis of Copper Indium Diselenide Powders

Lee

2010

Journal of the American Ceramic Society

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“…lof4 cm-3. As an alternative interpretation model it can be supposed that optical transitions from ionised acceptors with concentration N i and ionisation energy EA = E,, -E, to the conduction band are responsible for the effect observed, because acceptors with an ionisation energy close to 50 meV have also been observed in CuInSe2(ABOU-ELFOTOUH et al 1991 c ;SLIFKIN et al 1991 a). The respective absorption coefficient relation is obtained from relations (1 I ) and (12) if ED is replaced by EA, mhh by me and vice versa, and N D by N i(DOW et a].…”

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confidence: 99%

Optical Investigation of Defects in p‐type CuInSe₂ Single Crystals

Neumann

Jones

Sobotta

et al. 1996

Cryst. Res. Technol.

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Optical absorption spectra in the photon energy range from 0.03 to 1. I eV and photoreflectance spectra in the range of the fundamental edge are measured on p-type CuInSez single crystals. Besides a dominant contribution to the absorption coefficient due to intervalence band transitions below about 0.75 eV the spectra revealed five additional structures that can be ascribed to defect induced optical transitions with characteristic energies between 0.48 and 0.72 eV. Based on a comparison of the near-edge optical absorption and photoreflectance spectra a shallow defect (donor or acceptor) with an ionisation energy of about 46 meV was identified.

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