Optical Investigation of Defects in p‐type CuInSe<sub>2</sub> Single Crystals

Neumann, H.; Jones, Philip A.; Sobotta, H.; Hörig, W.; Tomlinson, R. D.; Yakushev, M. V.

doi:10.1002/crat.2170310113

Cited by 4 publications

(1 citation statement)

References 35 publications

(8 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…when taking multiple internal reflections into account (see Sec. A) [359,360]. I 0 is the intensity of the incident light, and R is the reflection coefficient.…”

Section: Optical Characterizationmentioning

confidence: 99%

Ti- and Fe-related charge transition levels in β−Ga2O3

Zimmermann

Frodason

Barnard

et al. 2020

Applied Physics Letters

View full text Add to dashboard Cite

This thesis would not have been possible without the support of many people, and I am eternally grateful for all the support. I hope to see some of you again in the future! The main objective of my PhD project was to study defects in semiconducting oxides within the research project FOXHOUND headed by Prof. Lasse Vines, my main supervisor. I am grateful to Lasse for the opportunity to work on this topic. I have learned much more than I imagined I would when I started. Lasse, you have been a patient and competent supervisor who always took time to answer endless streams of questions. Prof. Truls Norby and Assoc. Prof. Anette Eleonora Gunnaes were co-advisors for my PhD project. I am grateful to Truls for introducing me to the chemist's view on defects and his group FASE/ELCHEM. I am truly sad that I did not get to collaborate more with Anette. I also want to thank Prof. Eduard Monakhov and the late Prof. Bengt Gunnar Svensson. Both were valuable unofficial advisers on my PhD, and helped moving my work along. Most of my work was carried out within the semiconductor physics group at the University of Oslo (LENS), and I would like to thank of all its current and former members for contributing to my work in many ways. There are some people who deserve special thanks. First of all, I am grateful to my long-term office mates Torunn, Sigbjørn and Josef for sharing many conversations and being there for each other. Secondly, I am particularly grateful to all my close collaborators at LENS, and especially Julie, Philip, Ymir, Vegard R., Vegard O., Viktor and Espen. I also want to thank our engineers (Micke, Halvor, Christoph and Viktor) and administrative staff (Marit, Heine and Kristin) for keeping things running! Also, thanks to Ilia, Robert, Vegard R. and Jon for taking care of the needs of the E-Lab and the Online-Setup. I was a co-supervisor for two master students: Vegard R. and Espen. I hope both of them learned something from me, because I did definitely learn from them. I am particularly grateful to Vegard R. for being a large part in building the steady-state photo-capacitance setup used in this work. I also would like to thank all my co-authors from outside of Oslo: Frank from Dresden, Willem, Walter and Danie from Pretoria, Klaus and Zbigniew from Berlin, Antti from Aalto and Joel from California. Special thanks to Willem, Walter and Danie for hosting me in Pretoria and showing me around. Last but not least, I would like to thank my family and my friends for their support!

show abstract

“…when taking multiple internal reflections into account (see Sec. A) [359,360]. I 0 is the intensity of the incident light, and R is the reflection coefficient.…”

Section: Optical Characterizationmentioning

confidence: 99%

Ti- and Fe-related charge transition levels in β−Ga2O3

Zimmermann

Frodason

Barnard

et al. 2020

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Optical Absorption and Raman Scattering Measurements in CuAlSe₂ at High Pressure

Roa

Chervin

Chévy

et al. 1996

Physica Status Solidi (b)

View full text Add to dashboard Cite

The ternary compound CuAlSez is a direct energy gap semiconductor (Eg = 2.6 eV at 300 K) crystallizing in the tetragonal chalcopyrite structure. In this work the optical absorption edge and the Raman active modes of CuAlSez were measured as a function of pressure up to 30 GPa. The measurements were performed in a membrane diamond-anvil cell at ambient temperature using neon gas as pressure transmitting medium. The direct energy gap (ri + c) increases linearly with pressure at the rate of 4.7 x eV GPa-'. At 6.7 GPa the character of the fundamental gap changes to pseudodirect (ri + q). This gap decreases with pressure at a rate of -2.9 x lo-' eV GPa-'. The effect of pressure on the phonon frequencies is discussed in terms of the Griineisen parameters. A first-order structural phase transition was observed at 12 GPa in the upstroke and at 2 GPa in the downstroke.

show abstract

Optical spectroscopy of chalcopyrite compounds CuInS2, CuInSe2 and their solid solutions

Мудрый¹,

Victorov²,

Gremenok³

et al. 2003

Thin Solid Films

View full text Add to dashboard Cite

Optical Investigation of Defects in p‐type CuInSe₂ Single Crystals

Cited by 4 publications

References 35 publications

Ti- and Fe-related charge transition levels in β−Ga2O3

Ti- and Fe-related charge transition levels in β−Ga2O3

Optical Absorption and Raman Scattering Measurements in CuAlSe₂ at High Pressure

Optical spectroscopy of chalcopyrite compounds CuInS2, CuInSe2 and their solid solutions

Contact Info

Product

Resources

About

Optical Investigation of Defects in p‐type CuInSe2 Single Crystals

Cited by 4 publications

References 35 publications

Ti- and Fe-related charge transition levels in β−Ga2O3

Ti- and Fe-related charge transition levels in β−Ga2O3

Optical Absorption and Raman Scattering Measurements in CuAlSe2 at High Pressure

Optical spectroscopy of chalcopyrite compounds CuInS2, CuInSe2 and their solid solutions

Contact Info

Product

Resources

About

Optical Investigation of Defects in p‐type CuInSe₂ Single Crystals

Optical Absorption and Raman Scattering Measurements in CuAlSe₂ at High Pressure