Photoconductive imaging using hydrogenated amorphous silicon film

Imamura, Yoshinori; Ataka, Saburo; Takasaki, Y.; Kusano, C.; Hirai, T.; Maruyama, Eiichi

doi:10.1063/1.91126

Cited by 58 publications

(5 citation statements)

References 5 publications

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“…Interest in hydrogenated amorphous silicon (a-Si:H) has been greatly increased by the suitability of a-Si:H for the fabrication of low-cost solar cells [1] and large area photodetectors [2]. The large absorption coefficient of a-Si in the visible spectral range has made this material very attractive for solar cell applications.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of Al-doped a-Si:H films

El-Naggar

Bakry

1999

J. Phys.: Condens. Matter

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The effect of doping on a-Si:H film optical constants was studied. Evaporated films were doped with Al for making p-type material. The optical energy gap E g decreased with increase in doping concentration. The Urbach parameter increased with doping. The refractive index decreased with increasing Al concentration showing a sharp rise in dispersion curve for p + samples. The absorption coefficient increased with doping and the absorption edge shifted to lower energies.

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Section: Introductionmentioning

confidence: 99%

Optical properties of Al-doped a-Si:H films

El-Naggar

Bakry

1999

J. Phys.: Condens. Matter

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“…For the photovoltaic detector, the heterojunction gives the device excellent response speed and broadband detection range, but the multilayer structures effectively increase the device cost [14]. For the single-component photoconductive device, the indirect band gap structure makes the device suffer from slow response speed and little photocurrent [15]. Therefore, the silicon-based photoconductor with a suitable heterojunction will satisfy both sides.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a cost effective and broadband self-powered photodetector based on Sb₂Te₃ and silicon

Wang

Zhang

et al. 2019

Nanotechnology

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The excellent conductive surface electronic states of topological insulators make them suitable candidates for the next generation optoelectronic devices. Moreover, their unique semiconducting properties are favorable for building heterojunctions with other semiconductors. Here, we fabricated a low cost and broadband self-powered photodetector based on Sb2Te3 and Si. The photolithography and thermal evaporation technique were combined to fabricate a series of asymmetric planar Sb2Te3 electrodes on the surface of an n-type silicon substrate. An obvious asymmetrical current voltage curve occurred under dark conditions, which is ascribed to the asymmetry of each electrode. During the photodetection test, self-powered photodetection was obtained upon 940 nm light irradiation. Moreover, the photodetector exhibited fast and broadband photodetection from 365 nm to 940 nm with a response time less than 40 ms.

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“…Moreover, it is well known that in a-Si, electron multiplication occurs under a high electric field. [19][20][21] It was expected that efficiency would be further improved by adding the electron multiplication effect in DC-EL devices. In this study, whether a-Si shows multiplication under photoexcitation was confirmed, and we discuss the possibility of further efficiency improvement.…”

Section: Introductionmentioning

confidence: 99%

Effects of amorphous Si on DC electroluminescent devices

Yanagihara¹,

Unji²,

Nishiguchi³

et al. 2019

Jpn. J. Appl. Phys.

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In order to reduce the driving voltage of DC electroluminescent (EL) devices, an electron injection structure with a hydrogenated amorphous Si (a-Si:H) interlayer between a Ta2O5 layer and ZnS:Mn layer was investigated. It was shown that junction capacitance existed between the Ta2O5 layer and ZnS:Mn layer and that the junction capacitance decreased due to the insertion of the a-Si:H layer. These results were confirmed by impedance spectra. The threshold voltage decreased with the insertion of the a-Si:H layer, and luminance gradually increased over the threshold voltage compared with that in conventional DC-EL devices, because the interlayer formed a stepwise band structure in the device. Moreover, the carrier multiplication effect of a-Si was confirmed under photoexcitation. Although a clear multiplication effect was not obtained, the possibility of further efficiency improvement by the multiplication effect was shown.

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Photoconductive imaging using hydrogenated amorphous silicon film

Abstract: Highly resistive hydrogenated amorphous-silicon film has been fabricated and examined as blocking-type photoconductive target of a vidicon-type image pickup tube. The results indicate that this novel silicon vidicon has many advantages over conventional ones.

Cited by 58 publications

References 5 publications

Optical properties of Al-doped a-Si:H films

Optical properties of Al-doped a-Si:H films

Fabrication of a cost effective and broadband self-powered photodetector based on Sb₂Te₃ and silicon

Effects of amorphous Si on DC electroluminescent devices

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Photoconductive imaging using hydrogenated amorphous silicon film

Abstract: Highly resistive hydrogenated amorphous-silicon film has been fabricated and examined as blocking-type photoconductive target of a vidicon-type image pickup tube. The results indicate that this novel silicon vidicon has many advantages over conventional ones.

Cited by 58 publications

References 5 publications

Optical properties of Al-doped a-Si:H films

Optical properties of Al-doped a-Si:H films

Fabrication of a cost effective and broadband self-powered photodetector based on Sb2Te3 and silicon

Effects of amorphous Si on DC electroluminescent devices

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Product

Resources

About

Fabrication of a cost effective and broadband self-powered photodetector based on Sb₂Te₃ and silicon