2019
DOI: 10.1088/1361-6528/ab0d5c
|View full text |Cite
|
Sign up to set email alerts
|

Fabrication of a cost effective and broadband self-powered photodetector based on Sb2Te3 and silicon

Abstract: The excellent conductive surface electronic states of topological insulators make them suitable candidates for the next generation optoelectronic devices. Moreover, their unique semiconducting properties are favorable for building heterojunctions with other semiconductors. Here, we fabricated a low cost and broadband self-powered photodetector based on Sb2Te3 and Si. The photolithography and thermal evaporation technique were combined to fabricate a series of asymmetric planar Sb2Te3 electrodes on the surface … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
4
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 12 publications
(4 citation statements)
references
References 22 publications
(22 reference statements)
0
4
0
Order By: Relevance
“…Furthermore, antimony telluride films coated onto Si substrates displayed photodetector characteristics presented by a self-powered fast and broad band photodetection. The response time of this device was less than 40 ms 12 .…”
Section: Introductionmentioning
confidence: 92%
“…Furthermore, antimony telluride films coated onto Si substrates displayed photodetector characteristics presented by a self-powered fast and broad band photodetection. The response time of this device was less than 40 ms 12 .…”
Section: Introductionmentioning
confidence: 92%
“…76 Sb 2 Te 3 is a p-type semiconductor, and finding a suitable n-type material in combination with Sb 2 Te 3 could improve its photoelectric response. Si is an easily obtained n-type semiconductor, Yu et al 72 fabricated a broadband self-powered photodetector based on Sb 2 Te 3 and Si using photolithography and thermal evaporation technology. This detector has a fast response speed (<40 ms) and can realize photodetecting at 365–940 nm.…”
Section: Photodetectors Based On Topological Materialsmentioning
confidence: 99%
“…The development of science and technology has brought a series of conveniences to human beings. New devices such as solar cells, lithium batteries and photodetectors have gradually entered the homes of general people [1][2][3][4][5][6]. However, the toxic by-products produced in the manufacturing process of devices in turn damage the environment and human health.…”
Section: Introductionmentioning
confidence: 99%