Photo-induced hydrophilic properties of reactive RF magnetron sputtered TiO2 thin films

Xiong, Junjie; Das, Sachindranath; Kim, Sung-Yeon; Lim, Jinhyong; Choi, Hyunjoo; Myoung, Jae Min

doi:10.1016/j.surfcoat.2010.04.001

Cited by 36 publications

(13 citation statements)

References 42 publications

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“…Titanium dioxide (TiO 2 ) is a semiconductor-based metal oxide with excellent structural, optical, electrical, and chemical properties. These properties allow for its application in several areas, such as energy (hydrogen production, solar cells), environmental (aqueous and gaseous effluents), building (auto-cleaning surfaces), and biomedical (auto-sterilizing surfaces) [4][5][6][7]. Naturally, titanium dioxide occurs in three polymorphs: anatase, rutile, and brookite.…”

Section: Introductionmentioning

confidence: 99%

Annealing Control on the Anatase/Rutile Ratio of Nanostructured Titanium Dioxide Obtained by Sol-Gel

Castrejón-Sánchez¹,

López²,

Ramón-González³

et al. 2018

Crystals

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According to the different phases at which titanium dioxide (TiO2) crystallizes, previous studies have shown that anatase is more efficient for photocatalysis than rutile. Nowadays, the synergetic effect is well-accepted between anatase and rutile as having an effect in increasing performance in photocatalysis. In the present work, control over the anatase/rutile ratio was performed in three experimental steps. Initially, amorphous-anatase TiO2 powders were synthesized by the sol-gel method. For the crystallization of anatase, the powders were annealed at 250 °C for 2 h in ambient atmosphere. The final step was performed by using different annealing times, ranging from 35 up to 200 min at a temperature of 475 °C. The powders were characterized by Raman spectroscopy, UV–VIS, SEM and TEM techniques to determine the crystalline phase, band gap, morphology, and elemental composition, respectively. It was possible to control the anatase/rutile ratio on the nanostructured TiO2 powders from 100% of anatase until a complete transformation to rutile through the variation of the annealing time. The band gap calculated using the Tauc’s model was found in the range of 2.56 to 2.93 eV. However, no direct relationship between the anatase/rutile ratio, and the band gap was found.

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Section: Introductionmentioning

confidence: 99%

Annealing Control on the Anatase/Rutile Ratio of Nanostructured Titanium Dioxide Obtained by Sol-Gel

Castrejón-Sánchez¹,

López²,

Ramón-González³

et al. 2018

Crystals

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show abstract

“…2 shows the variation of Tauc plot by the target materials. For bulk material, anatase has a higher optical bandgap of 3.2 eV while rutile has a lower optical bandgap of 3.0 eV [6][7]. The calculated band gap energies for the films deposited by Ti target was 2.95 eV.…”

Section: Resultsmentioning

confidence: 92%

“…But the TiO 2 target got crack always, when the power density was increased over 3.4W/cm 2 . On the other hand, Ti target needs higher oxygen concentration in sputtering gas [3,6]. Even though Ti target can be input twice power density of 7.9W/cm 2 , the highest deposition rate for Ti target was 1.4/nm.…”

Section: Resultsmentioning

confidence: 99%

Crystal Structure And Optical Properties Of TiO2 Thin Films Prepared By Reactive RF Magnetron Sputtering

Goto¹,

Adachi²,

Matsuda³

et al. 2015

Archives of Metallurgy and Materials

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In sputtering deposition process of TiO 2 , metal Ti or sintered TiO 2 target is used as deposition source. In this study, we have compared the characteristic of target materials. When TiO 2 target was used, stoichiometric TiO 2 films was deposited under the Ar atmosphere containing 1.0% of oxygen. The highest sputtering rate under this atmosphere was 3.9nm/min at 3.4W/cm 2 . But, sintered TiO 2 target is fragile and cannot endure higher density of input power than 3.4W/cm 2 . On the other hand, Ti target needs higher oxygen concentration (8%) in sputtering gas atmosphere for obtaining rutile/anatase. Even though Ti target can be input twice power density of 7.9W/cm 2 , the highest deposition rate for Ti target was 1.4/nm, which was ∼35% of the highest rate for TiO 2 target. Then we have study out the composite target consisting of Ti plate and TiO 2 chips. Using the composite target, stoichiometric TiO 2 films were prepared in the rate of 9.6nm/min at 6.8 W/cm 2 under the atmosphere of Ar/2.5%O 2 . Furthermore, we have found that the TiO 2 films obtained from the composite target consisted of about 100% anatase, whereas TiO 2 films obtained from other target have rutile dominant structure. The optical band gap energy of the film is determined by using the Tauc plot. The calculated band gap energies for the films deposited by Ti target and composite target were 2.95 and 3.24eV, which are equivalent to that of rutile and anatase structure, respectively.Keywords: TiO 2 , Rutile, Anatase, sputtering, XRD W procesie nanoszenia TiO 2 metodą rozpylania, jako tarczy używano metalicznego Ti lub spiekanego TiO 2 . W pracy dokonano porównania obu materiałów. W przypadku zastosowania jako tarczy TiO 2 przy nanoszeniu w atmosferze Ar zawierającym 1,0% tlenu otrzymano stechiometryczną warstwę TiO 2 . Największa uzyskana szybkość rozpylania w tej atmosferze wyniosła 3,9 nm/min przy gęstości mocy wejściowej 3,4 W/cm 2 . Jednak spiekany TiO 2 jest kruchy i nie wytrzymuje gęstości mocy wejściowej powyżej 3,4 W/cm 2 . Z drugiej strony, przy rozpylaniu z tarczy Ti konieczne jest zwiększone stężenie tlenu (8%) w atmosferze aby otrzymać fazę rutyl/anataz. Mimo że tarcza Ti wytrzymuje gęstość mocy dwa razy wyższą niż TiO 2 (7,9 W/cm 2 ), największa uzyskana szybkość rozpylania wynosiła 1,4 nm/min, co stanowi ∼35% najwyższej szybkości uzyskanej dla tarczy TiO 2 . Zbadano także tarczę kompozytową składające się z płyty Ti oraz wiórów TiO 2 . W przypadku zastosowania tarczy kompozytowej, szybkość rozpylania wyniosła 9,6 nm/min przy mocy 6,8 W/cm 2 w atmosferze Ar/2,5%O 2 . Dodatkowo, warstwy TiO 2 otrzymane z tarczy kompozytowej zawierały około 100% anatazu, podczas gdy w przypadku warstw otrzymanych z pozostałych tarcz dominowała faza rutylu. Szerokość przerwy energetycznej wyznaczono na podstawie wykresu Tauca. Obliczone wartości przerwy energetycznej wynosiły 2,95 eV dla podłoża Ti i 3,24 eV dla podłoża kompozytowego, co odpowiada wartością przerw odpowiednio dla rutylu i anatazu.

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“…The thickness of the samples is decreased from 105 nm, 101 nm, 99.2 nm, 97.2 nm to 39.7 nm with an increment of oxygen partial pressure from 5.6%, 5.8%, 6.0%, 6.2% to 6.4%, respectively. A steep decrease in deposition rate at higher pO 2 is related to the transition from the metallic to the oxide mode of sputtering [18]. This transition is due to full oxidation of the Ti target and conversion of its surface to TiO 2À x (avalanche target poisoning), which gives a very low sputtering yield compared to that of a pure Ti surface [19].…”

Section: Deposition Ratementioning

confidence: 99%

Oxygen partial pressure and thermal annealing dependent properties of RF magnetron sputtered TiO2−x films

Reddy

Kang

Shin

et al. 2015

Materials Science in Semiconductor Processing

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Photo-induced hydrophilic properties of reactive RF magnetron sputtered TiO2 thin films

Cited by 36 publications

References 42 publications

Annealing Control on the Anatase/Rutile Ratio of Nanostructured Titanium Dioxide Obtained by Sol-Gel

Annealing Control on the Anatase/Rutile Ratio of Nanostructured Titanium Dioxide Obtained by Sol-Gel

Crystal Structure And Optical Properties Of TiO2 Thin Films Prepared By Reactive RF Magnetron Sputtering

Oxygen partial pressure and thermal annealing dependent properties of RF magnetron sputtered TiO2−x films

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