Phosphosilicate glass stabilization of FET devices

Balk, P.; Eldridge, J. M.

doi:10.1109/proc.1969.7336

Cited by 67 publications

(35 citation statements)

References 15 publications

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“…S21). Penetration of ions can be further retarded by the incorporation of high-quality silicon nitride or phosphosilicate glass, as adopted by the semiconductor industry since the 1980s (50,51). An ideal barrier for both water and ions may come from thin layers of thermal nitride, oxide/nitride bilayers, or even oxynitrides.…”

Section: Chemical and Physical Effects In Electrical Leakage Through mentioning

confidence: 99%

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

Fang

Zhao

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

191

196

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Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

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Section: Chemical and Physical Effects In Electrical Leakage Through mentioning

confidence: 99%

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

Fang

Zhao

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

191

196

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“…In Ref. 45 it is described that the PSG layer is viscous at process temperatures between 800 and 1200 C. This means that during the process a liquid-like PSG could exist on top of SiO 2 and Si. It might be that also part of the SiO 2 may be viscous, because the viscosity of SiO 2 is strongly influenced by its P content and possibly by other elements like N, C, and H. Even under these conditions the above described diffusion processes still exist.…”

Section: B Phosphorus In the Psg Layer And In Siliconmentioning

confidence: 99%

Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation

Wagner

Dastgheib-Shirazi

Min

et al. 2016

Journal of Applied Physics

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The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl 3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density N peak ¼ 8.0 Â 10 18 cm À3 and a junction depth d j ¼ 0.4 lm, resulting in a sheet resistivity q sh ¼ 380 X/sq and a saturation current-density J 0 below 10 fA/cm 2 . With these properties, the POCl 3 process can compete with ion implantation or doped oxide approaches. Published by AIP Publishing. [http://dx.

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“…The advantage of the phosphorous doped film [5,6] is also clearly demonstrated in the side braze package experiment. With comparable step coverage, the units with either PSG-B or PSG-C passivation have lower reject rates than the units with undoped SiON passivation.…”

Section: Effect Ofphosphorous Dopingmentioning

confidence: 65%