33rd IEEE International Reliability Physics Symposium 1995
DOI: 10.1109/relphy.1995.513698
|View full text |Cite
|
Sign up to set email alerts
|

An accelerated sodium resistance test for IC passivation films

Abstract: A low level IC burn-in failure mechanism caused by post-passivation sodium contamination has been observed. An accelerated stress test has been developed based on SIMS, SEM and TEM analysis. The results have been compared to burn-in data. Four types of passivation films and two types of assembly processes were used to demonstrate the effectiveness of this test.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

1997
1997
2015
2015

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
references
References 6 publications
0
0
0
Order By: Relevance