Phosphorus Oxide Assisted n-type Dopant Diffusion in 4H-Silicon Carbide

Mendis, Suwan; Tin, C. C.

doi:10.1557/proc-1246-b07-12

Cited by 3 publications

(4 citation statements)

References 18 publications

(16 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The solid-state diffusion method does not require toxic phosphine gas or pyrophoric liquid source and therefore does not pose any safety or environmental issue. In our study of low temperature impurity doping of SiC, we have found that phosphorus impurity doping of SiC can be carried out below 1400°C by solid state diffusion when assisted by a process to intentionally create vacancies [1,2,3]. Such process includes oxidation or silicidation [1,3].…”

Section: Introductionmentioning

confidence: 99%

“…In our study of low temperature impurity doping of SiC, we have found that phosphorus impurity doping of SiC can be carried out below 1400°C by solid state diffusion when assisted by a process to intentionally create vacancies [1,2,3]. Such process includes oxidation or silicidation [1,3]. The silicidation version of this vacancy-assisted impurity doping (VAID) technique can be performed by depositing a layer consisting of nickel and phosphorus oxide on top of SiC.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electroless Nickel for N-Type Contact on 4H-SiC

Mendis

Tin

et al. 2012

MSF

View full text Add to dashboard Cite

An electroless nickel film contains 5-14% by weight of phosphorus. Because of the presence of such a high concentration of phosphorus, electroless nickel can be a useful and convenient source of phosphorus dopant in the fabrication of n-type ohmic contacts for SiC. This paper describes the successful deposition of a Ni:P layer on 4H-SiC through electroless nickel plating followed by a discussion of the results of surface science and electrical measurements. Specific contact resistivity on lightly-doped samples with carrier concentration of 2.5 ´ 1016 cm-3 has been found to be about 4.8 ´ 10-6 Ωcm2 without any need for ion implantation. This metallization technique is especially useful in broad area ohmic contact formation on the back of n-type SiC substrate.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electroless Nickel for N-Type Contact on 4H-SiC

Mendis

Tin

et al. 2012

MSF

View full text Add to dashboard Cite

show abstract

“…This diffusion in 4H-SiC is performed at different temperatures ranging between 1150 and 1300 ∘ C during 30 min by our new method patented in USA and Uzbekistan and described in detail [17][18][19][20][21][22][23][24][25][26]. Below some information about new method of diffusion is given briefly.…”

Section: Methodsmentioning

confidence: 99%

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Atabaev

Juraev

Pak

2017

Advances in Condensed Matter Physics

View full text Add to dashboard Cite

P-i-n 4H-SiC⟨Al⟩ diode structures are fabricated by a new approach which is low temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into volume of crystal. In conventional diffusion in SiC, the operating temperature is usually >2050 ∘ C while, in this approach, the diffusion temperature is between 1150 and 1300 ∘ C. As the conditions of formation of junction in this method essentially differ from conventional diffusion (low temperature and process of diffusion are accompanied by forming structure defects), it is interesting to identify the advantages and disadvantages of a new method of diffusion. Fabricated p-i-n structures have low breakdown voltage between 80 and 140 V (due to the influence of dislocations and micropipes) and are capable of operating at temperatures up to 300 ∘ C. Structure has fast switching time and duration of the reverse recovery current less than 10 ns. We believe that because of low diffusion temperature, the concentration of nitrogen related trapping levels is relatively low and as a result the fast switching time is observed in our samples. It has been shown that this low temperature diffusion technology can be used to fabricate -region and high resistive -region of SiC diode in single-step process.

show abstract

“…This technique requires an assisting mechanism that can create silicon or carbon vacancies, which then facilitate impurity incorporation in the lattice. Compelling data and thermodynamic arguments (Mendis et al, 2010;Tin et al, 2010) show that the general approach of vacancy creation to assist subsequent impurity doping is feasible. Oxidation and silicidation are the two methods that have been studied for phosphorus and boron doping of 4H-SiC.…”

Section: Introductionmentioning

confidence: 99%

The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

Mendis

Tin

Atabaev

et al. 2013

IJFPS

View full text Add to dashboard Cite

Solid state thermal diffusion is not a common method of impurity doping in silicon carbide (SiC) device fabrication due to the extremely high temperatures required for such a process to occur. We have recently reported that solid state impurity doping by thermal diffusion in SiC is possible if there is a parallel mechanism, such as oxidation or silicidation that creates silicon or carbon vacancies, which then allows dopant impurities to diffuse into these vacancies. This paper describes the experimental procedures by which oxidation and silicidation can be used to generate vacancies and enhance impurity doping at temperatures below 1400 ºC .

show abstract

Phosphorus Oxide Assisted n-type Dopant Diffusion in 4H-Silicon Carbide

Cited by 3 publications

References 18 publications

Electroless Nickel for N-Type Contact on 4H-SiC

Electroless Nickel for N-Type Contact on 4H-SiC

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

Contact Info

Product

Resources

About