We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ∼ 9µm but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than 5µA, while the Thouless energy, E T h , covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IC RN is found to scale linearly with E T h , as expected from theory. However, the ratio IC RN /E T h is found to be 0.1-0.2: much smaller than the predicted ∼10 for long diffusive SNS junctions.