Graphene-Based Josephson-Junction Single-Photon Detector

Walsh, Evan; Efetov, Dmitri K.; Lee, Gil‐Ho; Heuck, Mikkel; Crossno, Jesse; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

doi:10.1103/physrevapplied.8.024022

Cited by 96 publications

(75 citation statements)

References 89 publications

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“…We use Γ d = 0.001Hz, which has been demonstrated for the quantum dot detector in THz regime at 0.05 K [72]. A wider bandwidth, lower dark count single-photon detector using graphene-based Josephson junction [76] may further improve the sensitivity in the future.…”

Section: Estimation Of A-tis Parametersmentioning

confidence: 99%

Proposal to Detect Dark Matter using Axionic Topological Antiferromagnets

et al. 2019

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Antiferromagnetically doped topological insulators (A-TI) are among the candidates to host dynamical axion fields and axion-polaritons; weakly interacting quasiparticles that are analogous to the dark axion, a long sought after candidate dark matter particle. Here we demonstrate that using the axion quasiparticle and antiferromagnetic fluctuations in A-TI's in conjunction with low-noise methods of detecting THz photons presents a viable route to detect axion dark matter with mass 0.7 to 3.5 meV, a range currently inaccessible to other dark matter detection experiments and proposals.

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Section: Estimation Of A-tis Parametersmentioning

confidence: 99%

Proposal to Detect Dark Matter using Axionic Topological Antiferromagnets

et al. 2019

Self Cite

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“…For example, integrating graphene or WS 2 with III–V gain semiconductors like InP or GaAs enables on‐chip mode‐locked lasers by taking advantage of saturable absorption of graphene and WS 2 . Integrating graphene or black phosphorous with nonlinear single‐crystal dielectrics enables single‐photon generation and detection on a chip . Therefore, with an integrated photonic platform for different types of 2D and single‐crystal dielectric materials, the hybrid 2D‐material PICs based on BICs have opened a new avenue for 2D‐material integrated photonics and also laid the foundation for exploring new optical functional devices on a chip, which shall bring many unprecedented applications in classical and quantum photonics.…”

Section: Discussionmentioning

confidence: 99%

Hybrid 2D‐Material Photonics with Bound States in the Continuum

Wang

Sun

et al. 2019

Advanced Optical Materials

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dielectric materials on a 2D material followed by postfabrication of PICs with lithography methods. [19][20][21][22] The layer transfer process of 2D materials on prefabricated PICs has the potential disadvantage of introducing strain and possible distortion of the 2D lattice if the strong van der Waals attraction between the 2D material and the dielectric surface produces conformal coverage over the sharp waveguide ridge corners, leading to reduced electron mobility, more phonon scattering centers, and possible degradation of device performance. While it is possible to planarize optical waveguides by additional processing involving deposition of low-refractive-index dielectrics followed by chemical-mechanical polishing, [6,8,13,23,24] such processes will reduce the optical overlap with the 2D material. For growing and patterning thin-film dielectric materials on 2D materials, the properties of both the thin-film dielectrics and 2D materials are usually affected adversely. [25][26][27][28] For example, the excellent properties of 2D materials can be destroyed by high-energy ions during the material growth process. Although some fabrication techniques for integrating 2D materials with dielectric materials like polymers [29] and chalcogenide glass [22] produce negligible effects on the material properties, they cannot universally be applied to many other types of dielectrics on 2D materials. In addition, few 2D materials can be grown on single-crystal materials with excellent optical properties. Therefore, a generic approach for integrating any types of 2D materials with any types of singlecrystal dielectrics is highly desired.The concept of "bound states in the continuum (BICs)" was first proposed by von Neumann and Wigner in 1929 with the mathematical construction of a 3D potential which can support perfectly confined states in a continuous band. [30] The radiation loss of these confined states can be eliminated by engineering their destructive interference with the continuous modes. [31][32][33][34][35][36][37][38][39] Harnessing BICs in PICs allows for low-loss light guidance and routing with a low-refractive-index waveguide on a high-refractive-index substrate. The light guided by the low-refractive-index waveguide can be confined to a region of the high-refractive-index substrate below the low-refractive-index waveguide. [40] Because the substrate is naturally flat, transferring a 2D material onto the high-refractive-index Integration of 2D materials on dielectric planar optical waveguides can make available new functionalities from the 2D materials' enhanced optoelectronic properties, such as nonlinearity, light emission, modulation, photodetection, and saturable absorption. However, the conventional integration schemes involving either the transfer of 2D materials onto prepatterned nonplanarized topology of photonic integrated circuits (PICs) or the growth and patterning of dielectric materials on 2D materials can degrade the properties of either the dielectric or the 2D material. Here, a fundamentally new ...

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“…To find an answer to the questions raised above, we first need to classify the main effects that can contribute to photocurrent (or photovoltage) generation in waveguide-integrated graphene devices [25][26][27][28]. One can distinguish three main effects -photo-voltaic (PV) [29][30][31][32][33][34], photo-bolometric (PB) [35][36][37][38][39] and photo-thermoelectric (PTE) [40][41][42][43] effects. The choice of the effect depends on device configuration, design and operation conditions [25,28,34,40].…”

Section: Photo-thermoelectric Effectmentioning

confidence: 99%

Ultrafast Plasmonic Graphene Photodetector Based on the Channel Photothermoelectric Effect

2020

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We propose an on-chip CMOS compatible graphene plasmonic photodetector based on the photothermoelectric effect (PTE) that occurs across an entire homogeneous graphene channel. The proposed photodetector incorporates the long-range dielectric-loaded surface plasmon polariton (LR-DLSPP) waveguide with a metal stripe serving simultaneously as a plasmon supporting metallic material and one of the metal electrodes. Large in-plane component of the transverse magnetic (TM) plasmonic mode can couple efficiently to the graphene causing large temperature increases across an entire graphene channel with a maximum located at the metal stripe edge. As a result, the electronic temperatures exceeding 12000K at input power of only a few tens of μW can be obtained at the telecom wavelength of 1550nm. Even with limitations such as the melting temperature of graphene (T= 4510 K), a responsivity exceeding at least 200 A/W is achievable at telecom wavelength of 1550 nm. It is also shown that under certain operation conditions, the PTE channel photocurrent can be isolated from photovoltaic and p-n junction PTE contributions providing an efficient way for optimizing the overall photodetector performance.

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Graphene-Based Josephson-Junction Single-Photon Detector

Cited by 96 publications

References 89 publications

Proposal to Detect Dark Matter using Axionic Topological Antiferromagnets

Proposal to Detect Dark Matter using Axionic Topological Antiferromagnets

Hybrid 2D‐Material Photonics with Bound States in the Continuum

Ultrafast Plasmonic Graphene Photodetector Based on the Channel Photothermoelectric Effect

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