We investigate the critical current, I C , of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I C is found to scale as ∝ exp(−k B T /δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As T → 0 the critical current of a long (or short) junction saturates at al level determined by the product of δE (or ∆) and the number of the junction's transversal modes.1 arXiv:1604.07320v3 [cond-mat.mes-hall] Oct 2016Encapsulated graphene/boron-nitride heterostructures emerged in the past year as a medium of choice for studying proximity-induced superconductivity in the ultra-clean limit [1][2][3][4]. These junctions support the ballistic propagation of superconducting currents across micron-scale graphene channels, and their critical current is gate-tunable across several orders of magnitude. In these devices, a rich phenomenology arises from the interplay of superconductivity with ballistic transport [1], cyclotron motion [2], and even the quantum Hall effect at high magnetic field [4]. In a superconductor -normal metal -superconductor (SNS) junction, single particles in the N region cannot enter the superconductor and therefore experience Andreev reflections at each S-N interface. This results in Andreev bound states (ABS), which are capable of 2 carrying superconducting current across the N region. In long ballistic junctions, the energy spectrum of the ABS is quantized with a level spacing of T is independent of V G . In the case of long ballistic graphene junctions, the inverse slope δE is expected to be independent of the carrier density and inversely proportional to L.In this work we study several ballistic junctions of different length and demonstrate that the temperature dependence of the critical current dramatically differs in the long and short regimes. For long junctions, we observe an exponential scaling of the current through the [5, 6,10,11]. Note that in graphene v F is a constant, and δE is expected to be independent of the carrier density or the mobility , 17-21], which could be attributed to either underdamped junction dynamics [8,20], or to the self-heating by the retrapping current [1,23]. As discussed in the supplementary material, the second scenario is more likely for most of the range studied here. Based on the measurements of the switching statistics [16,[24][25][26], in the following we will use the switching current to represent the true critical current of the junction, I C .In the hole-doped regime, the reflections of ballistic charge carriers from the n-doped contact interfaces yield the quantum ("Fabry-Perot") interference. A very similar oscillation pattern could be observed in the dependence of both the the normal conductance, G N , and the critica...

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We investigate the electronic properties of ballistic planar Josephson junctions with multiple superconducting terminals. Our devices consist of monolayer graphene encapsulated in boron nitride with molybdenum-rhenium contacts. Resistance measurements yield multiple resonant features, which are attributed to supercurrent flow among adjacent and non-adjacent Josephson junctions. In particular, we find that superconducting and dissipative currents coexist within the same region of graphene. We show that the presence of dissipative currents primarily results in electron heating and estimate the associated temperature rise. We find that the electrons in encapsulated graphene are efficiently cooled through the electron-phonon coupling.

We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ∼ 9µm but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than 5µA, while the Thouless energy, E T h , covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IC RN is found to scale linearly with E T h , as expected from theory. However, the ratio IC RN /E T h is found to be 0.1-0.2: much smaller than the predicted ∼10 for long diffusive SNS junctions.

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