PHET, an electrodeless photovoltaic electrochemical etchstop technique

Peeters, Eric; Lapadatu, Daniel; Puers, Robert; Sansen, Willy

doi:10.1109/84.311561

Cited by 25 publications

(11 citation statements)

References 8 publications

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“…Optical energy can also be used to modulate wet etching of silicon, and Peeters et al [55] described one such technique using photon pumping to generate carriers across a p-n junction while etching in KOH. Lehmann and Föll [56] and Lehmann [57] used photogenerated carriers to supply the necessary holes to the bases of prefabricated pits whose sharp bases served "high field points" to "focus" the holes and result in very highly anisotropic etch results.…”

Section: ) Control Of Surface Roughnessmentioning

confidence: 99%

Bulk micromachining of silicon

Kovacs

Maluf²,

Petersen³

1998

Proc. IEEE

656

374

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Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the more recent emergence of higher resolution, surfacemicromachining approaches, the majority of currently shipping silicon sensors are made using bulk etching. Particularly in light of newly introduced dry etching methods compatible with complementary metal-oxide-semiconductors, it is unlikely that bulk micromachining will decrease in popularity in the near future. The available etching methods fall into three categories in terms of the state of the etchant: wet, vapor, and plasma. For each category, the available processes are reviewed and compared in terms of etch results, cost, complexity, process compatibility, and a number of other factors. In addition, several example micromachined structures are presented.

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Section: ) Control Of Surface Roughnessmentioning

confidence: 99%

Bulk micromachining of silicon

Kovacs

Maluf²,

Petersen³

1998

Proc. IEEE

656

374

View full text Add to dashboard Cite

show abstract

“…[5][6][7][8][9][10] Potentialinduced anodic passivation is used as a commercial etch stop technique. [11][12][13] The potential-dependent surface structure present close to the open circuit potential (E OCP ) is still controversial, although its understanding is essential to elucidate the dissolution mechanism. 5,7,[14][15][16][17] For the slow etching (111) plane, scanning tunneling microscopy, 14 the hydrophobic character of the Si surface, 14 and FTIR measurements 15 indicate a prevailing hydrogen termination at potentials negative of E pas .…”

Section: Introductionmentioning

confidence: 99%

“…The surface composition of etching silicon is known to be potential dependent. − At potentials more positive than the passivation potential ( E pas ), an oxide layer is formed on silicon (100) in KOH resulting in a sharp drop of the etch rate and of the anodic current. − This gives rise to a characteristic passivation peak in the voltammetric response. − Potential-induced anodic passivation is used as a commercial etch stop technique. − …”

Section: Introductionmentioning

confidence: 99%

Time Domain Impedance Spectroscopy for Probing the Termination of Silicon (100) Surfaces in Aqueous KOH

et al. 2001

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Time domain impedance spectroscopy (TDIS), potential step experiments, and in-situ infrared spectroscopy (FTIR) have been used to probe the surface termination of silicon (100) in contact with aqueous potassium hydroxide. TDIS allowed time-dependent measurements of the space charge capacitance with a time resolution of ∼100 μs and was used to probe the interfacial potential and charge distribution. From this, an analysis of the surface termination could be made. For p-Si(100) these measurements suggest that the hydrogen termination present at negative potentials is replaced by polar Si−O−Si bridges between neighboring surface silicon atoms at anodic peak potentials. The changes in surface termination have a time constant of ∼1 s, which is slow compared with the time resolution of TDIS. Time-resolved Mott−Schottky plots could be constructed for both p- and n-Si(100). A flat band potential of −0.55 V was obtained for p-Si(100). For n-Si(100), the technique allowed space charge capacitance measurements that were sufficiently short to obviate surface passivation. Therefore, space charge capacitance measurements could be extended far into the passive potential range, from which a flat band potential of −0.85 V vs SCE was obtained.

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“…Peeters et al [42] describe a galvanic etch-stop method involving the illumination of a p/n junction. Etching stops at a p-type diffusion layer or epi-layer.…”

Section: Photovoltaic Etch-stop Techniquementioning

confidence: 99%

“…The p-type layer is protected from the etchant by a nitride layer. The n-type substrate is provided with a platinum film (from [42]). …”

Section: Photovoltaic Etch-stop Techniquementioning

confidence: 99%

Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication

et al. 2001

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A brief review of silicon etching and electrochemistry provides an introduction to galvanic cell formation in silicon/metal contacts in aqueous electrolyte solutions. It is shown that such galvanic cells, which operate under open-circuit conditions, can be used to perform most of the functions of anodic etching and passivation. Applications relevant to sensor fabrication are described. These include the control of surface morphology, etch-stop mechanisms, and microporous and macroporous etching. In addition, surface structuring by open-circuit photoetching, a process which also depends on galvanic effects, is considered.

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PHET, an electrodeless photovoltaic electrochemical etchstop technique

Cited by 25 publications

References 8 publications

Bulk micromachining of silicon

Bulk micromachining of silicon

Time Domain Impedance Spectroscopy for Probing the Termination of Silicon (100) Surfaces in Aqueous KOH

Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication

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