2018
DOI: 10.1021/acsomega.8b01964
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Phase Transition of Two-Dimensional β-Ga2O3 Nanosheets from Ultrathin γ-Ga2O3 Nanosheets and Their Photocatalytic Hydrogen Evolution Activities

Abstract: Monoclinic β-Ga 2 O 3 nanosheets hold great potential applications in electronic, optical, and photocatalytic fields. In this study, two-dimensional β-Ga 2 O 3 nanosheets were successfully fabricated through a simple crystalline phase transition from the as-prepared ultrathin γ-Ga 2 O 3 nanosheets. The photocatalytic hydrogen evolution reaction under UV light irradiation was… Show more

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Cited by 46 publications
(27 citation statements)
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“…The Ga 2p3/2 and Ga 2p1/2 peaks are positioned at 1145.03 eV and 1118.13 eV respectively for bulk gallium with a shift by 0.75 eV to a higher binding energy associated with the Ga-O bonding in Ga2O3 [21].…”
Section: Resultsmentioning
confidence: 95%
See 1 more Smart Citation
“…The Ga 2p3/2 and Ga 2p1/2 peaks are positioned at 1145.03 eV and 1118.13 eV respectively for bulk gallium with a shift by 0.75 eV to a higher binding energy associated with the Ga-O bonding in Ga2O3 [21].…”
Section: Resultsmentioning
confidence: 95%
“…A number of 2D materials that have recently emerged including transition metal dichalcogenides (TMDs), layered metal oxides, 2D inorganic compounds, hexagonal boron nitride (h-BN), layered double hydroxides (LDHs), black phosphorus (BP) and other elemental main group metals and metalloids [5][6][7][8][9][10][11][12][13][14][15]. 2D-nanomaterials derived from liquid metals and/or eutectic melts of the metals, in particular, are envisaged to break new barriers, offering unique properties and potential in applications [16][17][18][19][20][21][22][23]. In addition, it is a significant advantage that any development as such needs to incorporate the principles of green chemistry to minimise the likelihood of any downstream issues, including adverse effects on the natural environment, with the process being readily scalable.…”
mentioning
confidence: 99%
“…While both nitride and oxide phases co-exist after the thermal step at T = 800°C in air for 1 h (both reflection peaks sets for wurtzite GaN and monoclinic Ga 2 O 3 are found in the diffraction pattern), only reflections from the oxide remain after annealing at T = 950°C. Formation of monoclinic Ga 2 O 3 in thin structures was already observed for annealing temperatures as low as 750 °C [ 15 ].…”
Section: Resultsmentioning
confidence: 99%
“…There are several polymorphs of Ga 2 O 3 [54], such as the rhombohedral (α-Ga 2 O 3 ), monoclinic (β-Ga 2 O 3 ), defective spinel (γ-Ga 2 O 3 ), cubic (δ-Ga 2 O 3 ), and orthorhombic (ε-Ga 2 O 3 ) structure, among which the most chemical and thermal stable under ambient conditions is β-polymorph [55]. Moreover, the various forms of low-dimensional crystalline Ga 2 O 3 , including nanowires (NWs) [56,57], nanobelts (NBs) [58], and nanosheets (NSHs) [59], are the subject of research. Ga 2 O 3 is an n-type semiconductor with an ultrawide-bandgap in the range of 4.2-5.3 eV [54,60,61].…”
Section: Introductionmentioning
confidence: 99%