Phase transition and phonon dynamics in NiPdSi: An annealing study by temperature-dependent Raman spectroscopy

Abstract

We have demonstrated the effective Raman spectroscopy for the phase transition and phonon dynamics of NiPdSi films annealed at various temperatures. In addition to the appearance of alloy disorder-induced Raman peaks, we have shown that the presence of Pd in NiSi results not only in the retardation of NiSi2 phase transition to about 900 °C, but also in the redshift (∼3–4 cm−1) of the first-order Raman peaks. The observed Raman frequency downshift with increasing temperature can be described well by a model which has taken into account the contributions of the anharmonic, thermal expansion, and strain effects, revealing the dominant role of the phonon decay. Effects of Pd addition and annealing temperature on the Raman frequency and linewidth have been discussed. The introduction of Pd is found to reduce the Raman frequency downshift, demonstrating the favorable use of NiPdSi for microelectronics applications.

Fast growth of branched nickel monosilicide nanowires by laser-assisted chemical vapor deposition

“…These two peaks confirm the formation of NiSi NWs on the Ni foam substrates [23][24][25]. As indicated in figure 2(e), the strongest peak at 214 cm −1 and weak peaks at 362 and 289 cm −1 belong to the A g modes of NiSi [26,27]. The second strongest peak at 196 cm −1 and the weak peak at 254 cm −1 are assigned to the B 1g and B 2g modes of NiSi, respectively [24].…”

Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

“…24,25 The peak at 217, 294, and 363 cm À1 are assigned to A g mode whereas 199 cm À1 assigned to the B 1g mode. 26 A slight sift ($1 cm À1 ) of peak compared to as reported by the Karabko et al 26 has been observed. A small shoulder peak observed at 371 cm À1 is attributed to a formation of NiSi 2 phase in the film.…”

Phase formation and film morphology of ultrathin Co1−xNixSi2 films

“…Representative MRS spectra are shown in Fig. 10,11 Further increasing x to 0.5 (curve C), decreasing t to 1 nm (curve D), or increasing T RTP to 550 C (curve E) leads to the disappearance of this peak. Starting with x ¼ 0, t ¼ 2 nm, and T RTP ¼ 500 C, the characteristic MRS peak at 204 cm À1 (curve A) is indicative of the formation of CoSi.…”