Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing

Nam, Sung-Wook; Kim, Cheolkyu; Kwon, Minho; Lee, Hyo-Sung; Wi, Jung‐Sub; Lee, Dongbok; Lee, Tae-Yon; Khang, Yoonho; Kim, Ki-Bum

doi:10.1063/1.2899967

Cited by 45 publications

(20 citation statements)

References 14 publications

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“…The stuck set can be attributed to the gradual development of a concentration gradient by phase separation due to incongruent melting or ionic migration. [ 11–14 ] The stuck reset can be attributed to the failure of the GST/heater interface due to void formation or delamination, which mostly occurs at the GST/other material interface. [ 14–17 ] Delamination is an interfacial fracture and may be affected by the mechanical stress.…”

Section: Materials Thermal Conductivity [W M−1 K−1] Electrical Conductmentioning

confidence: 99%

Analysis of Stuck Reset Failure in Phase‐Change Memory by Calculating Phase‐Change Stress using Finite Element Simulation

Lee

Kwon

2021

Physica Rapid Research Ltrs

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Stuck reset is an open‐circuit failure that occurs in phase‐change memory (PCM) after repeated reset and set operations, that is, endurance cycling. Stuck reset is majorly caused by phase‐change stress, which is the mechanical stress induced during a reset operation due to the density difference between the amorphous and crystalline phases of the phase‐change material. This indicates that a reduction in phase‐change stress may improve the endurance characteristics of PCM. Herein, a simulation technique for the calculation of phase‐change stress using a finite‐element software is proposed. Subsequently, a comparative study of the endurance of different PCM device architectures is performed. The results reveal that the self‐heating architecture exhibits superior endurance compared to the heater‐based architecture. Furthermore, the void locations in the experiments coincide with the most highly stressed locations in the simulation.

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Section: Materials Thermal Conductivity [W M−1 K−1] Electrical Conductmentioning

confidence: 99%

Analysis of Stuck Reset Failure in Phase‐Change Memory by Calculating Phase‐Change Stress using Finite Element Simulation

Lee

Kwon

2021

Physica Rapid Research Ltrs

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“…In some previous studies, doping is beneficial to increase the crystallization temperature of base materials, such as doping N 14,15 , Cu 16 and W 17 . But after doping, phase separation is always accompanied, impeding the further improvement of crystallization speed, deteriorating device performance, and decreasing cycling times 18 . Ti doping was also found to increase the crystallization speed owing to Ti centered atomic motifs in both amorphous and crystalline state 19 .…”

Section: Introductionmentioning

confidence: 99%

Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application

Chen

Zheng

Zhu

et al. 2018

Sci Rep

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Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.

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“…15 Because GST has an incongruent melting region below the melting temperature, the pseudo-binary phases of Sb 2 Te 3 and GeTe were separated during solidification, which produced Ge-deficient and Sb-rich voids. 16 Therefore, the void area previously consisted of a locally molten state, and the compositional change was initiated during solidification. Fig.…”

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confidence: 99%

Electrical current-induced gradual failure of crystalline Ge2Sb2Te5 for phase-change memory

Park¹,

Yang²,

Cho³

et al. 2013

Applied Physics Letters

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Electrical failure in crystalline Ge2Sb2Te5 was observed under a direct current bias, which induces a steady degradation of the electrical conductivity. This failure is induced by electromigration because alternating current bias stressing does not trigger this behavior. Nano-scaled voids were generated during current stressing, which explains the gradual increase in the quantitative resistance. Each nano-void previously comprised a molten phase that was induced by localized melting, which produced compositional variation during the solidification process. The phase-change memory can be damaged by electrical stressing in the non-active regions.

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Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing

Cited by 45 publications

References 14 publications

Analysis of Stuck Reset Failure in Phase‐Change Memory by Calculating Phase‐Change Stress using Finite Element Simulation

Analysis of Stuck Reset Failure in Phase‐Change Memory by Calculating Phase‐Change Stress using Finite Element Simulation

Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application

Electrical current-induced gradual failure of crystalline Ge2Sb2Te5 for phase-change memory

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