Analysis of Stuck Reset Failure in Phase‐Change Memory by Calculating Phase‐Change Stress using Finite Element Simulation

Lee, Hwanwook; Kwon, Yongwoo

doi:10.1002/pssr.202000419

Cited by 4 publications

(1 citation statement)

References 28 publications

(44 reference statements)

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“…It was obvious that the fatigue times showed an inversely linear relationship with the electrode width. In the process of repeated phase transition, the electrical and thermal stresses will cause the element accumulation, component segregation and so on, which eventually leads to cell failure [15]. As narrower electrode width corresponds to smaller power consumption, thermal damage to the PCM is reduced, so it shows better endurance characteristic.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the effect of blade electrode width on performance of phase change memory

Cui¹,

Cai²,

Li³

et al. 2021

Semicond. Sci. Technol.

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The blade bottom electrode contact (BEC) can significantly reduce the programming current of the phase change memory (PCM) and achieve low power consumption compared with the typical T-shaped PCM cell. The method of controlling the electrode width by controlling the thickness of the deposited layer can make the size break through the limit of photolithography. This paper proves that the RESET programming current and power consumption of the PCM decrease linearly with the decrease of the blade BEC width, and builds a theoretical model to verify it by simulating the distribution internal temperature field. Based on the above research, the cell life of PCM with different electrode widths was tested, and it was proved that the endurance of PCM increased with the decrease of the width of the blade electrode, caused by the lower power consumption of the narrower electrode.

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Section: Resultsmentioning

confidence: 99%

Investigation of the effect of blade electrode width on performance of phase change memory

Cui¹,

Cai²,

Li³

et al. 2021

Semicond. Sci. Technol.

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Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Xia,

Wang,

Yang

et al. 2024

Laser & Photonics Reviews

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Phase‐change‐materials (PCMs) integrated photonics have attracted extensive attention in the field of optical neural networks. However, present PCMs‐integrated photonics are still far from meeting the requirements in real‐world applications due to its unsatisfactory endurance (<3000 cycles) and extinction ratio (ER<20 dB). Here, ultrahigh endurance (>30 000 cycles) and large ER (≥50 dB) are achieved in the photonic device by introducing a trench structure to the indium tin oxide (ITO) heater and utilizing tin‐doped Ge2Sb2Te5 (Sn‐GST) as PCMs. This performance represents a landmark in the PCMs‐integrated photonics, since it solves the problem of poor endurance of ITO heaters and can be comparable to the state‐of the‐art devices in terms of endurance and ER. This excellent endurance and ER stem from the trench structure and high optical contrast PCM of Sn‐GST. Trench structure improves the heating efficiency of the ITO heater and effectively alleviates the thermal stress imposed on the ITO heater, resulting in ultrahigh endurance of the device. Sn‐doping is also beneficial to the endurance and ER improvement, because it can effectively reduce the crystallization temperature and increase the absorption coefficient of the PCM layer. This work provides a new technology for the development of programmable photonics with ultrahigh endurance.

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Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory

Kim

Park

Lee

et al. 2023

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Phase‐change random‐access memory is a promising non‐volatile memory technology. However repeated phase‐change operations can cause durability issues owing to defects formed by long‐distance atom diffusion. To mitigate these issues, phase‐change heterostructure (PCH) devices with confinement material (CM) layers based on transition metal dichalcogenides (TMDs) such as TiTe2 have been proposed. This study implements PCH devices with additional TMDs, including NiTe2 and MoTe2, alongside TiTe2, and analyzes their characteristics by examining the differences in the CM layers. The results show that the NiTe2‐based PCH device demonstrates a RESET current of 1.4 mA, 38% lower than that of the TiTe2‐based device, enabling low‐power operation. Furthermore, the MoTe2‐based PCH device exhibits a cycling endurance exceeding 107 cycles, a five‐fold improvement in durability compare with the TiTe2‐based device. The performance differences observe in each PCH device can be attributed to the variation in the material properties, such as the cohesive energy and electrical conductivity, of the TMDs used as the CM layer. These results provide critical clues to improve the performance and reliability of conventional PCH memory devices.

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Analysis of Stuck Reset Failure in Phase‐Change Memory by Calculating Phase‐Change Stress using Finite Element Simulation

Cited by 4 publications

References 28 publications

Investigation of the effect of blade electrode width on performance of phase change memory

Investigation of the effect of blade electrode width on performance of phase change memory

Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory

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