Phase-matched second-harmonic generation in GaAs optical waveguides by focused laser beams

Ziel, J. P. van der; Miller, Robert C.; Logan, R. A.; Nordland, W. A.; Mikulyak, R. M.

doi:10.1063/1.1655455

Cited by 36 publications

(17 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be exploited to achieve QPM in second-order nonlinear processes. The post-growth QPM fabrication techniques using intermixing offer greater flexibility than other alternative phase-matching techniques, including BPM using selective oxidation [20], MPM [47][48][49][50][51][52] and QPM by domain inversion using growth on patterned substrates [32,33,[55][56][57][58]. Although promising, patterned substrate growth is still associated with high optical losses and low yield.…”

Section: Sputtered Silica Defect Induced Quantum Well Intermixingmentioning

confidence: 99%

“…On the other hand, a fundamental limitation with GaAs is its optical isotropy, which inhibits birefringent phase matching. To circumvent this problem, a number of techniques have been effectively used to achieve phase matching in GaAs-based waveguide structures, including form birefringence phase matching (BPM) [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30], quasi-phase-matching (QPM) [31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46] and modal phase matching (MPM) [47][48][49][50][51][52]. Variations of some of these techniques, demonstrated experimentally and predicted theoretically, include periodic switching of nonlinearity (PSN) in GaAs/AlGaAs waveguide crystals [53,54], sublattice reversal epitaxy [55], crystal domain inversion [56,57], orientation patterned GaAs [58][59]…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

Rao¹,

Moutzouris²,

Ebrahim-Zadeh³

2004

J. Opt. A: Pure Appl. Opt.

View full text Add to dashboard Cite

We describe the use of GaAs-based semiconductor optical waveguides for nonlinear frequency conversion of femtosecond pulses in the infrared. Different techniques for the realization of phase matching, including artificial birefringence, quasi-phase-matching and modal dispersion, are reported and analysed and key issues relating to efficiency, practicality and applicability are discussed. Using the data obtained from these experiments, an overall comparison is made with other prominent techniques in order to identify the most promising and viable route to the development of efficient semiconductor waveguide frequency conversion devices for incorporation in the future generation of integrated photonic networks. Millenia Ti:Sapphire PPLN OPO Signal / Idler RG 850 P M T Lock-In Amp. Chopper Drive Voltage Control Beam Diagnostics λ /2 @ 1.55 µ m Chopper Monochromator Flipper Mirrors Polarizing Beam splitter IR Camera Sample X 40 X 20 X 40 X 20 Beam Diagnostics λ /2 @ 1.55/2.0 µ m Flipper Mirrors Polarizing Beam splitter IR Camera

show abstract

Section: Sputtered Silica Defect Induced Quantum Well Intermixingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

Rao¹,

Moutzouris²,

Ebrahim-Zadeh³

2004

J. Opt. A: Pure Appl. Opt.

View full text Add to dashboard Cite

show abstract

“…Thanks to its direct band gap, the latter platform presents an evident interest for the electrical injection. In order to deal with the isotropic structure of this crystal, several solutions have been proposed to achieve nonlinear optical conversion in AlGaAs waveguides [14][15][16][17][18]; among these, modal phase matching, in which the phase velocity mismatch is compensated by multimode waveguide dispersion, is one of the most promising to monolithically integrate the laser source and the nonlinear medium into a single device [19,20]. In this scheme, the interacting modes can either be confined by homogeneous claddings [21] or by photonic band gap [22], this latter option avoiding aging problems via the reduction of the total aluminum content.In this letter we present an electrically injected Al-GaAs device that emits photons pairs at telecom wavelength and operates at room temperature.…”

mentioning

confidence: 99%

Electrically Injected Photon-Pair Source at Room Temperature

et al. 2014

View full text Add to dashboard Cite

One of the main challenges for future quantum information technologies is miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of non-classical states of light have a clear advantage over optically driven ones. Here we demonstrate the first electrically driven semiconductor source of photon pairs working at room temperature and telecom wavelength. The device is based on type-II intracavity Spontaneous Parametric Down-Conversion in an AlGaAs laser diode and generates pairs at 1.57 µm. Time-correlation measurements of the emitted pairs give an internal generation efficiency of 7 × 10 −11 pairs/injected electron. The capability of our platform to support generation, manipulation and detection of photons opens the way to the demonstration of massively parallel systems for complex quantum operations.PACS numbers: 42.65. Lm, 03.67.Bg, 42.55.Px, Photons have a peculiar advantage in the development of quantum information technologies [1-3], since they behave naturally as flying qubits presenting a high speed transmission over long distances and being almost immune to decoherence [4,5]. The intrinsic scalability and reliability of integrated photonic circuits has recently given rise to a new generation of devices for quantum communication, computation and metrology [6]. Nevertheless even if great progress have been made in the manipulation [7,8] and detection [9] of nonclassical state of light on chip, a complete integration of the light source in the photonic circuitry stays one of the main challenges on the way towards large scale applications; such devices would have a clear advantage over optically driven ones in terms of portability, energy consumption and integration. Semiconductor materials are ideal to achieve extremely compact and massively parallel devices: concerning photon-pair sources, the bi-exciton cascade of a quantum dot has been used to demonstrate an entangledlight-emitting diode at a wavelength of 890 nm [10]. However, even if the use of a single emitter guarantees a deterministic emission, these devices operate at cryogenic temperature, greatly limiting their potential for applications.Optical parametric conversion offers an alternative approach. Despite its non-deterministic nature, this process is the most widely used to produce photon pairs for quantum information and communications protocols. Up to now, entangled photon pairs have been generated by optical pumping in passive semiconductor waveguides by exploiting four-wave mixing in Silicon [11] or SPDC in Aluminium Gallium Arsenide (AlGaAs) [12,13]. Thanks to its direct band gap, the latter platform presents an evident interest for the electrical injection. In order to deal with the isotropic structure of this crystal, several solutions have been proposed to achieve nonlinear optical conversion in AlGaAs waveguides [14][15][16][17][18]; among these, modal phase matching, in which the phase velocity mismatch is compensated by multimode waveguide dispersion, is one of the mos...

show abstract

“…In essence, the dispersion due to the optical confinement of the interacting waveguide modes nullifies the dispersion of the core and cladding materials. Higher order waveguide modes are used for higher frequency modes due to the normal dispersion of the constituent materials . However, the use of higher‐order modes compromises the nonlinear mode overlap and thus the nonlinear conversion efficiency.…”

Section: Other Approaches To χ(2) Waveguides On Siliconmentioning

confidence: 99%

Second‐Harmonic Generation in Integrated Photonics on Silicon

Rao

Fathpour

2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

This paper presents the recent progress on integrated second-order nonlinear waveguides on silicon substrates for second-harmonic generation. In particular, demonstrations of thin-film lithium niobate, III-V compound semiconductor and dielectric waveguides integrated on silicon substrates are reviewed. For completeness, the fundamentals of the nonlinear optical processes involved are briefly introduced. Methods demonstrated for phase matching, e.g., periodic poling and mode-shape modulation, in the compact integrated devices are discussed. Finally, an outlook for how integrated photonics may benefit from the progress in this field is provided.

show abstract

Phase-matched second-harmonic generation in GaAs optical waveguides by focused laser beams

Cited by 36 publications

References 10 publications

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

Electrically Injected Photon-Pair Source at Room Temperature

Second‐Harmonic Generation in Integrated Photonics on Silicon

Contact Info

Product

Resources

About