Phase formation between Ni thin films and GaAs substrate

Rabhi, S.; Perrin-Pellegrino, Carine; Zhiou, S.; Benoudia, M.C.; Texier, M.; Hoummada, K.

doi:10.1016/j.scriptamat.2017.07.011

Cited by 6 publications

(6 citation statements)

References 17 publications

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“…The composition corresponds to Ni 3.06 Ga 0.89 As 1.06 , which confirms the formation of the Ni 3 GaAs as the first phase for the thickest sample. This is in good agreement with the stoichiometry found for the 20-nm-thick Ni film [ 26 ].…”

Section: Resultssupporting

confidence: 91%

“…In situ XRD and APT analysis shows that the first phase to form during the solid-state reaction between Ni film and GaAs substrate is Ni 3 GaAs and not Ni 2 GaAs [ 26 ], in contrary to what was reported in literature [ 34 , 46 , 47 , 48 ]. The epitaxial relationship between this phase and the GaAs substrate was also evidenced: (111) GaAs//(0001) Ni 3 GaAs and [1

0] GaAs//[11

0] Ni 3 GaAs [ 26 ]. This relationship was first determined for the same thin film system [ 34 ] and, recently, for the intermetallic phase Ni 3 In 0.53 Ga 0.47 As [ 49 ].…”

Section: Discussionmentioning

confidence: 88%

“…In this work, we chose the Ni/GaAs metal-semiconductor system to understand the different phenomena that may occur upon the various fabrication processes since the GaAs substrates are similar to InGaAs processes due to the complete miscibility of In and Ga in the zinc-blende structure [ 24 , 25 ]. This is why the understanding of phenomena involved in both Ni/GaAs [ 26 ] and Ni/InAs [ 27 ] solid-state reactions is crucial for the fabrication and development of components for optoelectronics, photovoltaics, and microelectronics based on III-V semiconductors.…”

Section: Introductionmentioning

confidence: 99%

“…The solid-state reaction between metal films and GaAs substrates has been conducted to achieve intermetallic compounds with good and stable contact [ 28 , 29 , 30 , 31 ]. The solid state reaction between Ni film and GaAs substrate leads to the epitaxial formation of the intermetallic Ni 3 GaAs phase [ 26 , 32 , 33 , 34 , 35 ]. The growth of the phases is coupled and depends on the mass-balance at the interfaces, which itself depends on the diffusion of Ni, Ga, and As species.…”

Section: Introductionmentioning

confidence: 99%

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Thickness Effect on the Solid-State Reaction of a Ni/GaAs System

et al. 2022

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Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film’s thickness results in a change of the Ni film’s texture. This difference has an impact on the formation temperature of Ni3GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni3GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni3−xGaAs1−x at about 400 °C. Similarly to Ni3GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer.

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Section: Resultssupporting

confidence: 91%

0] GaAs//[11

0] Ni 3 GaAs [ 26 ]. This relationship was first determined for the same thin film system [ 34 ] and, recently, for the intermetallic phase Ni 3 In 0.53 Ga 0.47 As [ 49 ].…”

Section: Discussionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thickness Effect on the Solid-State Reaction of a Ni/GaAs System

et al. 2022

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“…The single-phase Ni-GaAs alloy is identified as Ni 3 GaAs since the volume ratio between the alloy and the deposited metal is close to 2. 34 Moreover, the energy-dispersive X-ray spectroscopy (EDX) analysis (see Supporting Figure S4a for precise results) shows an average atomic ratio for Ni/Ga/As of 57:18:25 (with variations across different grains), which corresponds to the stoichiometry of Ni 3 GaAs. 35 The first phase formed between Pd and GaAs after deposition is likely to be Pd 12 Ga 5 As 2 since three peaks (marked by black dashed rectangles) were identified corresponding to the (121), (130), and (040) crystal planes, 36 and the atomic ratio of 62:23:15 for Pd/Ga/ As measured by EDX is consistent with such a stoichiometry (see Supporting Figure S4b).…”

Section: ■ Resultsmentioning

confidence: 99%

Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds

Mallet,

Müller,

Pezard

et al. 2023

ACS Appl. Mater. Interfaces

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GaAs nanowires are promising candidates for emerging devices in a broad field of applications (e.g., nanoelectronics, photodetection, or photoconversion). These nanostructures benefit greatly from a vertical integration, as it allows for the exhibition of the entire nanowire surface. However, one of the main challenges related to vertical integration is the conception of an efficient method to create low resistive contacts at nanoscale without degrading the device performance. In this article, we propose a complementary metal-oxide-semiconductor (CMOS)-compatible approach to form alloyed contacts at the extremities of vertical GaAs nanowires. Ni-based and Pd-based alloys on different vertical GaAs nanostructures have been characterized by structural and chemical analyses to identify the phase and to study the growth mechanisms involved at the nanoscale. It is shown that the formation of the Ni 3 GaAs alloy on top of nanowires following the epitaxial relation Ni 3 GaAs(0001)∥GaAs( 111) leads to a pyramidal shape with four faces. Finally, guidelines are presented to tune the shape of this alloy by varying the initial metal thickness and nanowire diameters. It will facilitate the fabrication of a nanoalloy structure with tailored shape characteristics to precisely align with a designated application.

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