2019
DOI: 10.1007/978-981-13-6133-3_29
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Effect of Temperature on Phase Formation in Thin Bilayer Ni/GaAs Films

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Cited by 1 publication
(2 citation statements)
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“…It is possible that NiAs was formed due to the change in the chemical composition of the Ni 3 GaAs ternary phase. One can assume that the ternary phase composition changes during the reaction from Ni 3 GaAs to NiAs as follows: Ni 3 GaAs → Ni 3−x GaAs 1−x + xNiAs [ 31 , 47 , 51 ].…”
Section: Discussionmentioning
confidence: 99%
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“…It is possible that NiAs was formed due to the change in the chemical composition of the Ni 3 GaAs ternary phase. One can assume that the ternary phase composition changes during the reaction from Ni 3 GaAs to NiAs as follows: Ni 3 GaAs → Ni 3−x GaAs 1−x + xNiAs [ 31 , 47 , 51 ].…”
Section: Discussionmentioning
confidence: 99%
“…The solid-state reaction between metal films and GaAs substrates has been conducted to achieve intermetallic compounds with good and stable contact [ 28 , 29 , 30 , 31 ]. The solid state reaction between Ni film and GaAs substrate leads to the epitaxial formation of the intermetallic Ni 3 GaAs phase [ 26 , 32 , 33 , 34 , 35 ].…”
Section: Introductionmentioning
confidence: 99%