Phase change memory line concept for embedded memory applications

Attenborough, K.; Hurkx, G.A.M.; Delhougne, Romain; Perez, Jose Ignacio Gomez; Wang, M.T.; Ong, T.C.; Tran, L.C.; Roy, Deepu; Gravesteijn, D.J.; Duuren, M.J. van

doi:10.1109/iedm.2010.5703442

Cited by 11 publications

(8 citation statements)

References 4 publications

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“…Even though AIST has been used for prototype PCRAM device fabrication in academic studies [13] it is unlikely that it will be found in PCRAM products because of the incompatibility of Ag and In containing alloys with CMOS technology. However, using another dopant, successful array level integration in an advanced 65 nm CMOS process flow of a PCRAM memory concept based on a narrow line of a doped-Sb 2 Te phase has been demonstrated [14,15].…”

Section: Principle Of Phase Change Technologymentioning

confidence: 98%

Pcram

Raoux¹,

Ritala

2013

Atomic Layer Deposition for Semiconductors

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Section: Principle Of Phase Change Technologymentioning

confidence: 98%

Pcram

Raoux¹,

Ritala

2013

Atomic Layer Deposition for Semiconductors

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“…1. At the opposite side, in a self-heating cell the phase change is due only to the Joule heating produced by the current flux within the chalcogenide layer [17], [18], [19]. The amorphouscrystalline transition begins in a hot spot within the chalcogenide layer, where the local nanostructure accommodates thermodynamic conditions favorable to nucleation, as a consequence of the energy dissipation provided by electric transport; then, the nuclei grow and form a filament that eventually connects the two contacts.…”

Section: Sources Of Variabilitymentioning

confidence: 99%

Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation

Jacoboni

Brunetti

Rudan

2017

IEEE Trans. Electron Devices

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The stochastic nature of the switching mechanism of phase-change memory (PCM) arrays, which is a drawback for memory applications, can fruitfully be exploited to implement primitives for hardware security. By applying a set voltage pulse, whose amplitude corresponds to a switching probability of 50%, to a memory array initially placed in the full-reset state, half of the memory bits are statistically switched and programmed to state '1,' whereas the remainder of the bits persist in state '0.' Such a natural randomness can be exploited to create a true random number generator (TRNG), which is the building block of cryptographic applications. The feasibility of a TRNG by means of self-heating PCM cells is assessed and demonstrated through simulations based upon the random network model, i.e., a microscopic transport model previously developed and tested by the authors

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“…Depending on the nature and working of these devices current may flow continuously or for short intervals through the contacts in a device. In a Phase Change Random Access Memory (PCRAM) cell, the functional layer is a thinfilm of chalcogenide alloy or Phase Change Material (PCM) integrated into the first metalization level of the integrated circuit [1]. The contacts for this memory cell are established between the PCM layer and the interconnect metalization.…”

Section: Introductionmentioning

confidence: 99%