Persistent photoconductivity in ZnCdSe MBE films grown on GaAs

Hernández, Leonardo; Rivera‐Alvarez, Z.; Hernández‐Ramírez, L. M.; Hernández‐Calderón, I.

doi:10.1016/s0038-1101(02)00341-6

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…The deposition technique and its associated parameters have a characteristic effect on nucleation and growth of the thin films. Different workers [7][8][9][10][11] have prepared Cd 1-x Zn x Se films by different techniques and their structural, optical and photo electrochemical properties have been studied. However, few efforts have not been made to study the structural, optical and electrical properties of the thin films of Cd 1-x Zn x Se prepared from the mechanical mixed of CdSe and ZnSe.…”

Section: Introductionmentioning

confidence: 99%

Structural, Optical and Electrical Properties of CdZnSe Films

Patidar¹,

Saxena²,

Sharma³

2011

AIP Conference Proceedings

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Thin films of Cd 1-x Zn x Se (x = 0, 0.2, 0.4, 0.6, 0.8 & 1) with variable composition have been deposited onto glass substrates using mechanically mixed CdSe and ZnSe by vacuum evaporation technique. These thin films have been characterized through the XRD, optical and electrical characterization technique. XRD patterns confirm the preferred orientation and polycrystalline nature of the thin films. Absorption edge shifts towards lower wavelength range with the increase of Zn concentration. The variations of energy band gap have been determined and discussed with Zn concentration. The electrical conductivity of so prepared thin films has been determined in the temperature range from room to 413 K. The result indicates that the electrical conductivity decreases with increasing Zn content

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Section: Introductionmentioning

confidence: 99%

Structural, Optical and Electrical Properties of CdZnSe Films

Patidar¹,

Saxena²,

Sharma³

2011

AIP Conference Proceedings

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“…Non-exponential build-up and decay of photoconductivity and photocapacitance in semiconductors with metastable defects, the so-called DX centers, have been reported a number of times. The decay kinetics of both photoconductivity and photocapacitance [1][2][3][4][5][6][7][8][9][10][11][12] in these materials may be well described by the stretched-exponential function, known also as the Kohlrausch-Williams-Watts function.…”

Section: Introductionmentioning

confidence: 99%

Stretched-exponential photoionization of the DX-related centers in indium-and gallium-doped Cd_1−xMn_xTe alloys

Trzmiel

Płaczek‐Popko

Wróbel

et al. 2008

J. Phys.: Condens. Matter

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The kinetics of photoconductivity build-up in indium- and gallium-doped Cd1−xMnxTe mixed crystals was studied at 80 K. The photoconductivity transients are non-exponential, due to the presence of metastable DX centers, formed by both elements in these semiconductors. It has been shown for the first time that the kinetics of the observed photoconductivity transients can be properly described solely by the Kohlrausch–Williams–Watts (KWW) function. This statement has been verified by the careful analysis of the derivatives of the transients. It has been found that they obey short-time power-law behavior, regardless of the donor type and the content of manganese. This asymptotic property can be explained exclusively by the KWW approach. Such an approach results from a broad distribution of relaxation rates related to the DX centers. It is reasonable to assume that, in Cd1−xMnxTe alloys, the broad distribution arises from the differences in local atomic configurations in the vicinity of the DX centers.

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