Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)

Wang, Z. M.; Mazur, Yu. I.; Salamo, Gregory J.; Lytvin, Petro M.; Strelchuk, V. V.; Valakh, M. Ya.

doi:10.1063/1.1760219

Cited by 16 publications

(9 citation statements)

References 17 publications

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“…1,2 Corresponding interest in an ensemble of randomly distributed InGaAs QDs is driven by potential applications for optoelectronic devices, such as low-threshold lasers and normalincident intersubband infrared detectors. [6][7][8][9][10][11] In particular long chains of uniform QDs over 5 µm in length have been achieved, 7 and they are unyielding to a moderate deviation of surface orientation from GaAs͑100͒. The lateral spatial ordering of QDs has been hindered by the stochastic nature of self-assembly, which raises a question of whether this process can by itself achieve the desired lateral control of QD positioning or whether outside help, such as lithography, is needed.…”

Section: Introductionmentioning

confidence: 99%

Control on self-organization of InGaAs/GaAs(100) quantum-dot chains

Wang

Mazur

Holmes

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Direct imaging of self-organized anisotropic strain engineering for improved one-dimensional ordering of (In,Ga)As quantum dot arrays J. Appl. Phys. 95, 109 (2004); 10.1063/1.1631069 Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers Appl. Phys. Lett. 82, 841 (2003); 10.1063/1.1544641 Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation controlThe spontaneous formation of long chains of quantum dots during the growth of InGaAs/GaAs multiple layers has been reported recently. The effects of In content and spacer on the evolution of dotchains are investigated in the present work. By reducing the In content in the InGaAs layer, the quantum dots in chains are more connected and finally arrays of quantum wires would form. By changing the GaAs spacer layer thickness, the vertical and also lateral spacing between dotchains can be continually tuned. The capability to insert a thick layer of AlGaAs as part of the spacer layer enables us to fabricate InGaAs quantum-dot chains without vertical electronic coupling. The achieved control of self-assembly of organized InGaAs quantum dots may be advantageous for novel optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Control on self-organization of InGaAs/GaAs(100) quantum-dot chains

Wang

Mazur

Holmes

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…16. 17,18 To study the process of positioning of the QD chains, we report in Fig. 2 the AFM image of the surface of sample L4 together with a cross sectional Transmission Electron Microscopy (TEM) image of the ð 110Þ plane of the same sample showing the dot vertical stacking in the [001] direction.…”

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confidence: 99%

Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales

Placidi

Arciprete

Latini

et al. 2014

Applied Physics Letters

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An innovative multilayer growth of InAs quantum dots on GaAs(100) is demonstrated to lead to self-aggregation of correlated quantum dot chains over mesoscopic distances. The fundamental idea is that at critical growth conditions is possible to drive the dot nucleation only at precise locations corresponding to the local minima of the Indium chemical potential. Differently from the known dot multilayers, where nucleation of new dots on top of the buried ones is driven by the surface strain originating from the dots below, here the spatial correlations and nucleation of additional dots are mostly dictated by a self-engineering of the surface occurring during the growth, close to the critical conditions for dot formation under the fixed oblique direction of the incoming As flux, that drives the In surface diffusion

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“…Depending on the substrate surface orientation, one can obtain QDs ordered along the [0 11] direction (QD chains) (Fig. 5a) [30] or laterally ordered networks of nearly equal distant QDs [31] (Figs.5b,c) (QD chains look as aligned along the microsize defect orientation direction). Here, the defect orientation and symmetry have a one-to-one correlation with the position of QDs on the surface.…”

Section: Substratementioning

confidence: 99%