Microsize defects in InGaAs/GaAs A/B multilayers quantum dot stacks

Lytvyn, P. M.; Prokopenko, I. V.; Strelchuk, V. V.; Mazur, Yu. I.; Wang, Zh. M.; Salamo, Gregory J.

doi:10.1016/j.jcrysgro.2005.07.005

Cited by 5 publications

(1 citation statement)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was found that one prevalent type of growth defect in molecular beam epitaxy (MBE) grown PbSe epitaxial layers, the so-called 'cuboid growth pits', was composed of single or multiple micrometre-sized PbSe crystals with their geometric structures embedded in the PbSe (1 1 1) epilayers [9]. For the prevailing II-VI and III-V materials such as Hg 1−x Cd x Te and In 1−x Ga x As, the formation of various growth defects such as twins, craters, hillocks and V-shaped defects has been intensively studied and different models have been proposed to explain the growth mechanisms [10][11][12]. To the best of our knowledge, similar studies of IV-VI materials have not been done.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanism of cuboid growth pits in lead selenide epilayers grown by molecular beam epitaxy

Curtis

Zurbuchen

et al. 2010

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Microstructures and crystallographic orientations of cuboid growth pits in lead selenide (PbSe) epilayers grown on Si (1 1 1) by molecular beam epitaxy (MBE) have been studied by scanning electron microscopy and cross-sectional transmission electron microscopy. Cuboid density was found to be dependent on MBE growth parameters such as sample thickness and substrate temperature. Cuboid growth defects nucleate spontaneously on the PbSe growth surface probably at Pb droplets. This nucleation results in randomly oriented PbSe crystallites that preferentially grow along the [1 0 0] axis of the NaCl-type crystal structure. This preferential growth results in cuboid crystallites with cubic faces protruding from the epitaxial (1 1 1) face.

show abstract