Perpendicular Exchange Anisotropy in Mn-Ir/Fe-Co/[Pt/Co]$_{4}$ Multilayers

Takahashi, Hirokazu; Tsunoda, Masakiyo; Takahashi, M.

doi:10.1109/tmag.2012.2196760

Cited by 6 publications

(7 citation statements)

References 15 publications

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“…The exchange anisotropy energy J K , de ned as J K = M S ·t FM ·H EX (where M S is the saturation magnetization, t FM is the FM layer thickness, and H EX is the exchange bias eld), can exceed 0.4 mJ/m 2 15) . Perpendicular exchange bias has been reported in several systems using other AFM layers such as CoO 21) , NiO 22) , FeF 2 23) , MnPd 24) , Fe-Mn [25][26][27] , and Ir-Mn 26,[28][29][30][31] . 25,26) and Fe-Co 30,31) between their Pt/Co multilayers and Ir-Mn layers.…”

Section: Perpendicular Exchange Bias Induced By Cr 2 O 3 (0001)mentioning

confidence: 90%

Perpendicular Exchange Bias and Magneto-Electric Control Using Cr2O3(0001) Thin Film

Shiratsuchi

Nakatani

2016

Mater. Trans.

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Antiferromagnets themselves do not generate either stray elds or spontaneous magnetization. However, if an antiferromagnet is coupled with a ferromagnet, unique and useful characteristics appear. Exchange bias is one such characteristic that is utilized in spintronic devices like spin-valve lms. To date, exchange bias has been used to induce static effects in devices; however, the exchange bias has not been switchable in these devices. Recently, switchable exchange bias has been developed using Cr 2 O 3 , which exhibits a magnetoelectric effect in an antiferromagnetic layer. The promising features of this effect are (1) the strength of the exchange bias is high and its direction is perpendicular to the lm, and (2) the switching is triggered by an electric eld. In this overview, we will summarize our recent results on the unique temperature dependence of high, perpendicular exchange bias and magnetoelectric switching of the induced perpendicular exchange bias.

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Section: Perpendicular Exchange Bias Induced By Cr 2 O 3 (0001)mentioning

confidence: 90%

Perpendicular Exchange Bias and Magneto-Electric Control Using Cr2O3(0001) Thin Film

Shiratsuchi

Nakatani

2016

Mater. Trans.

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“…Modern spintronic devices are designed so that any magnetization or spin is aligned perpendicular to the film plane to ensure integration, high speed operation, and low power consumption. The perpendicular exchange bias that is necessary to meet the requirements for future spintronics has been reported in several systems, such as [Co/Pt] 5 /(Co þ CoO), 6 [Co/MnPd] 10 multilayers, 7 [Pt/Co] 4 /Pt/Fe-Co/MnIr, 8 and Pt/ Co/Cr 2 O 3 . 9,10 In some of these systems, a spacer layer such as Pt is inserted at the FM/AFM interface to control/enhance the exchange bias field, [11][12][13] and this sometimes gives rise to the enhancement in coercivity mentioned above.…”

Section: Introductionmentioning

confidence: 99%

Simultaneous achievement of high perpendicular exchange bias and low coercivity by controlling ferromagnetic/antiferromagnetic interfacial magnetic anisotropy

Shiratsuchi

Kuroda

Nguyen

et al. 2017

Journal of Applied Physics

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This study investigates the influence of Pt and Au spacer layers on the perpendicular exchange bias field and coercivity of Pt/Co/(Pt or Au)/Cr 2 O 3 /Pt films. When using a Pt-spacer, the perpendicular exchange bias was highly degraded to less than 0.1 erg/cm 2 , which was about half that of the Auspacer system. The Au spacer also suppressed the enhancement in coercivity that usually occurs at around room temperature when using Pt. It is suggested that this difference in exchange bias field is due to in-plane interfacial magnetic anisotropy at the Pt/Cr 2 O 3 interface, which cants the interfacial Cr spin from the surface normal and results in degradation in the perpendicular exchange bias.

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“…Some studies also suggest that exchange bias is enhanced if this moment is perpendicular to the plane of the film. 16,17 An essential requirement for technological applications is that the AF layer magnetically orders well above room temperature.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulations of the fcc kagome lattice: Competition between triangular frustration and cubic anisotropy

et al. 2013

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The impact of local cubic anisotropy on the magnetic states of the Heisenberg model on the fcc kagome lattice are examined through classical Monte Carlo simulations. Previous simulations revealed that the macroscopic degeneracy of the two-dimensional (2D) kagome exchange-coupled co-planar spin system partially persists in the 3D case of ABC stacked layers giving rise to a discontinuous phase transition. Local cubic anisotropy is shown to remove this degeneracy by re-orienting the spins out of the co-planar configuration. In addition, the re-oriented states are shown to carry a uniform magnetic moment. Simulation results indicate that the effect of anisotropy is to transform the first-order phase transition to a continuous one. These results are relevant to Ir-Mn alloys which have been widely used by the magnetic storage industry in thin-film form as the antiferromagnetic pinning layer in spin valves.

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Perpendicular Exchange Anisotropy in Mn-Ir/Fe-Co/[Pt/Co]$_{4}$ Multilayers

Cited by 6 publications

References 15 publications

Perpendicular Exchange Bias and Magneto-Electric Control Using Cr<sub>2</sub>O<sub>3</sub>(0001) Thin Film

Perpendicular Exchange Bias and Magneto-Electric Control Using Cr<sub>2</sub>O<sub>3</sub>(0001) Thin Film

Simultaneous achievement of high perpendicular exchange bias and low coercivity by controlling ferromagnetic/antiferromagnetic interfacial magnetic anisotropy

Monte Carlo simulations of the fcc kagome lattice: Competition between triangular frustration and cubic anisotropy

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