Perpendicular Exchange Bias and Magneto-Electric Control Using Cr&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;(0001) Thin Film

Shiratsuchi, Yu; Nakatani, Ryoichi

doi:10.2320/matertrans.me201506

Cited by 28 publications

(46 citation statements)

References 55 publications

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“…This barrier is inversely proportional to the thickness of the AFM layer 23,29,30 . A dilemma ensues; a small ME switching energy in thin films (20-50 nm) while having a large exchange-bias is required for reliable device operation.…”

Section: Introductionmentioning

confidence: 99%

Low-energy magnetoelectric control of domain states in exchange-coupled heterostructures

et al. 2017

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The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information memories and storage requires a heterostructure with a ferromagnetic layer for readout through the exchange-bias field. In magnetoelectric and multiferroic antiferromagnets, the exchange coupling exerts an additional impediment (energy barrier) to magnetization reversal by the applied magnetoelectric energy. We proposed and verified a method to overcome this barrier. We controlled the energy required for switching the magnetic domains in magnetoelectric Cr 2 O 3 films by compensating the exchange-coupling energy from the ferromagnetic layer with the Zeeman energy of a small volumetric spontaneous magnetization found for the sputtered Cr 2 O 3 films. Based on a simplified phenomenological model of the field-cooling process, the magnetic and electric fields required for switching could be tuned. As an example, the switching of antiferromagnetic domains around a zero-threshold electric field was demonstrated at a magnetic field of 2.6 kOe.

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Section: Introductionmentioning

confidence: 99%

Low-energy magnetoelectric control of domain states in exchange-coupled heterostructures

et al. 2017

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“…15 In case of Cr2O3/Co systems, a usual averaged PEB was mainly observed for Pt spacer systems, 2,8 while a local PEB was observed partly for Cr spacer system. 5 In additions, domain by domain coupling of Co and Cr2O3 surface spin was visually observed for no-spacer system by x-ray magnetic circular dichroism (XMCD) measurements, 3,22 which is example of a local PEB. Designing these two intermediate state is required with respect to each applications.…”

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confidence: 99%

Control of lateral ferromagnetic domains in Cr2O3/Pt/Co thin film system with positive exchange bias

Nozaki

Al‐Mahdawi

Pati

et al. 2017

Applied Physics Letters

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We investigated the perpendicular exchange bias (PEB) switching from negativeto positive-exchange bias state for Cr2O3/Pt/Co exchange coupling thin film system exhibiting positive exchange bias phenomena. By changing Pt spacer layer thickness or measurements temperature, we demonstrated the control of two kind of intermediate state of the switching; the double hysteresis loop indicating local, non-averaged PEB, and single hysteresis loop indicating averaged PEB. We proposed the way to control the lateral ferromagnetic domain though the control of PEB magnitude.

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“…Cr 2 O 3 is one of few materials which can achieve 180° manipulation of antiferromagnetic spin in electrical mean. Thus far, electrical manipulation of antiferromagnetic spin in Cr 2 O 3 /FM exchange bias systems has been extensively investigated, for future storage/memory/logic applications . This research has developed detection techniques which access the 180° difference in the antiferromagnetic spin .…”

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confidence: 99%

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

Nozaki

Al‐Mahdawi

Shiokawa

et al. 2018

Physica Rapid Research Ltrs

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Antiferromagnets and ferrimagnets with a low net magnetic moment are key components for future spintronic devices because they enable high-integration and high-speed (on the order of THz) operations. Cr 2 O 3 is one of the few antiferromagnets that can achieve 180 manipulation of its spin by electrical means. In this study, the authors developed a new functional material, Cr 2 O 3 , with tunable parasitic magnetization. The authors demonstrate both magnitude and direction tunability of parasitic magnetization in Cr 2 O 3 thin films by doping. A sublattice magnetization reduction and displacement-induced nonequivalent Cr moments by site-selective substitution of nonmagnetic elements are inferred to be the origin of the parasitic magnetization. By utilizing the tunable parasitic magnetization, the authors demonstrate the manipulation of antiferromagnetic single domain. In addition, the authors confirm the low-electric-field switching ability of the antiferromagnetic spin in a doped Cr 2 O 3 /Co exchange coupling system. Such tunable parasitic magnetization enables easy manipulation and detection of antiferromagnetic spin and provides a platform for further understanding of antiferromagnets and research opportunities in innovative spintronics device applications.For a decade, ferromagnetic materials have played a prominent role in the development of spintronics. Ferromagnet (FM)based spintronics have resulted in unique high-performance devices, such as magnetoresistive random-access memory (MRAM). [1] However, specific problems, such as magnetic interferences, are a considerable barrier to further integration of these devices, restricting their future development. One way to overcome such problems is to utilize antiferromagnets (AFMs) or ferrimagnets with low net magnetic moments instead of FMs. As stated by N eel, [2] the high potential of AFMs has been recognized for a long time; AFMs do not generate stray fields, are stable in the presence of an external magnetic field, and have THz precession frequency, which enable the realization of high-integration and ultra-high-speed operation devices. Although the difficulty in conventional manipulation and detection of antiferromagnetic spin restricts its spintronics applications, these processes have increasingly become more feasible due to recent progress. [3][4][5] In particular, 90 control (uniaxial anisotropy control) of antiferromagnetic spin become more feasible. 90 manipulations of the antiferromagnetic spin using an electric current were demonstrated for FeRh through current-induced Joule heating, [6,7] and CuMnAs through spin-orbit torque. [8,9] The corresponding detection techniques, such as anisotropic magnetoresistance (AMR), [8,10,11] tunnel anisotropic magnetoresistance (TAMR), [12] and spin Hall magnetoresistance (SMR) of AFM, [13] which can detect 90 difference in antiferromagnetic spin has also been developed. In contrast, 180 control (unidirectional anisotropy control) of antiferromagnetic spins has been rarely demonstrated, while it enable higher perfo...

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Perpendicular Exchange Bias and Magneto-Electric Control Using Cr<sub>2</sub>O<sub>3</sub>(0001) Thin Film

Cited by 28 publications

References 55 publications

Low-energy magnetoelectric control of domain states in exchange-coupled heterostructures

Low-energy magnetoelectric control of domain states in exchange-coupled heterostructures

Control of lateral ferromagnetic domains in Cr2O3/Pt/Co thin film system with positive exchange bias

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

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