Perhydridosilicone films produced by IR laser-induced chemical vapour deposition from disiloxane

Abstract

Solid perhydridosilicone films have been produced by transversely excited atmospheric (TEA) and continuous-wave CO 2 laser-induced gas-phase decompositions of H 3 SiOSiH 3 controlled by elimination and polymerization of transient silanone H 2 Si=O and affording silane and hydrogen as side products. The decomposition mechanism is supported by evidence of scavenged intermediates and minor volatile products. The films are characterized by FT infrared and x-ray photoelectron spectroscopy and by scanning electron microscopy and shown to undergo facile oxidation of the topmost layers in air and chemical changes upon argon ion sputtering.