UV laser photolysis of silacyclopent‐3‐ene: effect of admixtures on nature of chemically vapour‐deposited organosilicon films

Abstract

Examination of ArF laser‐induced gas‐phase photolysis of silacyclopent‐3‐ene, occuring as extrusion of silylene, in the presence of admixtures reveals that photolysis is not interfered with in the presence of N2, CO and CO2, but it is in the presence of O2, 2‐C4F8, CH3OH, CD3OH, CF3CH2OH and CH3CO2H. Formation of volatile products and solid deposited films incorporating fluorine or oxygen atoms is interpreted in terms of reactions of silylene with the admixtures. Copyright © 2002 John Wiley & Sons, Ltd.

Laser-induced gas-phase pyrolysis of dimethyl selenium: chemical deposition of selenium and poly(selenoformaldehyde)

“…The samples of dimethyl selenium (6-20 Torr)-SF 6 (6-24 Torr) and of dimethyl selenium (10 Torr)-SF 6 (30 Torr)-D 2 (20 Torr) were irradiated in a reactor [18] (volume: 140 ml) which was equipped with a sleeve with rubber septum and PTFE valve, and consisted of two orthogonal positioned Pyrex tubes (both 3 cm in diameter, one 9 cm and the other 13 cm long) fitted with KBr windows.…”