Performance overview and outlook of EUV lithography systems

Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

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“…There are still three issues to deal with this technique: power source, resists and mask infrastructure [14,15].…”

Section: Challenges In Euv Lithographymentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

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“…1 However, as device scaling 2 continues to drive innovative patterning solutions, extreme ultraviolet lithography (EUVL) has begun to receive industry-wide acceptance to complement and likely replace DUV lithography. 3 Due to the considerable absorption of EUV radiation, the lithography system is based completely on reflective rather than refractive optics. This reflective design introduces a new class of defects not seen in previous mask technologies.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of multilayer defect repair viability and protection techniques for extreme ultraviolet masks

Isogawa¹,

Seki²,

Lawliss

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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“…The small resist feature size requires thin resist thickness. For example, the EUV resist thickness was 50 nm and below at the latest EUV exposure tool [4,5]. Recently the resist thickness becomes to be 20 -30 nm in 7 nm node.…”

Section: Introductionmentioning

confidence: 99%

Absorption Coefficient Measurement Advanced Method of EUV Resist by Direct-Resist Coating on a Photodiode

Niihara

Mamezaki

Watanabe

et al. 2017

J. Photopol. Sci. Technol.

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Since the resist thickness in EUV lithography of which base material mainly consists of an organic material is thin, the EUV photon energy is not be used efficiently for the EUV chemical reaction. In order to increase chemical reaction incidence in the EUV photon energy, a resist having a high-absorption material compounds for the EUV photons has been developed. It has been studied to increase the absorption including high-absorption materials such as hafnium and zinc, tin oxide, tellurium. For the development of the next-generation high sensitive resist materials, since it is significant to measure the EUV absorption coefficient accurately, it is necessary to measure the transmittance and resist thickness to obtain the absorption coefficient accurately. Thus, we have developed to evaluate the absorption coefficient of the EUV resist at BL 10 beamline of NewSUBARU synchrotron hlight facility. In the previous paper, we measured the EUV resist transmittance on a freestanding membrane. However, since it was very difficult to coat resist on a membrane with high uniformity, the transmittance could not be measured accurately. Thus, we have developed the precise transmittance measurement method by coating resist on a photodiode directly, and the resist thickness on a photodiode was measured by XRR accurately instead on conventional method. Finally, the accurate measurement of EUV resist absorption coefficient was achieved.

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Performance overview and outlook of EUV lithography systems

Cited by 36 publications

References 1 publication

The Challenges of Advanced CMOS Process from 2D to 3D

The Challenges of Advanced CMOS Process from 2D to 3D

Evaluation of multilayer defect repair viability and protection techniques for extreme ultraviolet masks

Absorption Coefficient Measurement Advanced Method of EUV Resist by Direct-Resist Coating on a Photodiode

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