Performance of mid-wave T2SL detectors with heterojunction barriers

Asplund, Carl; Würtemberg, R. Marcks von; Lantz, Dan; Malm, Hedda; Martijn, Henk; Plis, E.; Gautam, Nutan; Krishna, S.

doi:10.1016/j.infrared.2012.12.004

Cited by 29 publications

(10 citation statements)

References 22 publications

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“…The top and bottom contacts are doped to 2 Â 10 18 cm À3 and 6 Â 10 17 cm À3 respectively, and the doping concentration in the absorber is 3 Â 10 16 cm À3 (p-type). This is a slightly modified and improved version of the epitaxial design reported in [13], as explained in detail in [15]. A calculated band edge diagram for this structure is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

High image quality type-II superlattice detector for 3.3 μm detection of volatile organic compounds

Malm

Gamfeldt

Würtemberg

et al. 2015

Infrared Physics & Technology

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Section: Methodsmentioning

confidence: 99%

High image quality type-II superlattice detector for 3.3 μm detection of volatile organic compounds

Malm

Gamfeldt

Würtemberg

et al. 2015

Infrared Physics & Technology

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“…Compare to standard InAs/GaSb SL detectors, the overlap of carrier wave functions is increased by about 25% with Nstructure design [4]. The specific detectivity in these detectors was measured as high as 3 Â 10 12 Jones with cut-off wavelengths of 4.3 mm at 79 K reaching to 2 Â 10 9 Jones and 4.5 mm at 255 K [5].…”

Section: Introductionmentioning

confidence: 93%

“…Temperature dependence of N A in the absorber is in the range of 1 Â 10 15 À1 Â 10 16 cm À3 [8,12] and mobilities are taken as vertical mobilities [13]. Generation-recombination (GR) current originates from the GR centres (also known as Shockley-Read-Hall traps) in the middle of the band gap of depletion region causing the generation-recombination of minority carriers.…”

Section: Dark Current Modelmentioning

confidence: 99%

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Tansel

Hoştut

Elagöz

et al. 2016

Superlattices and Microstructures

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a b s t r a c tTemperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.

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“…In Figure 11(a) and (b), the contributions of diffusion, GR, and TAT currents to dark current and dark current density, respectively, are plotted versus applied bias voltage [39,74].…”

Section: Trap-assisted Tunneling (Tat)mentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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Performance of mid-wave T2SL detectors with heterojunction barriers

Cited by 29 publications

References 22 publications

High image quality type-II superlattice detector for 3.3 μm detection of volatile organic compounds

High image quality type-II superlattice detector for 3.3 μm detection of volatile organic compounds

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

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