Performance of Carbon monoxide-sensitive MOSFET's with metal-Oxide semiconductor gates

Dobos, K.; Zimmer, G.

doi:10.1109/t-ed.1985.22094

Cited by 33 publications

(7 citation statements)

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“…2͒. Direct access to the SiO 2 surface is excluded by this film structure, devoid of gaps or channels, as corroborated by the complete absence of response 17,18 to CO, in concentrations up to 200 ppm. Unlike Au gate devices, 9 Cu gates are also totally insensitive to H 2 , presumably due to the gettering action of the base metal.…”

Section: Resultsmentioning

confidence: 71%

Gas sensing properties of copper gate metal–oxide–semiconductor capacitors

Filippini

Aragón

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Metal–oxide–semiconductor capacitors with sputtered 100 nm thick copper gates, operated at 180 °C, are sensitive to NO2, with no cross sensitivity either to H2 or CO, in inert atmospheres and air. Sensitivity to NO is present in air only. Flatband voltages shift positive with NO2 stimulus, similarly to gold gates of comparable morphology, but responses are an order of magnitude smaller. Unlike Au, response and relaxation times are independent of NO2 concentration and the signal is affected by negative drift, due to gate oxidation. Ultraviolet photoelectron spectroscopy measured changes of the work function upon NO2 adsorption, which are larger for copper than gold, are not representative of the corresponding gate-dielectric change.

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Section: Resultsmentioning

confidence: 71%

Gas sensing properties of copper gate metal–oxide–semiconductor capacitors

Filippini

Aragón

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…FET sensors are fabricated by replacing the gate materials in a normal FET with CO sensing metals or metal-oxide semiconductors, whose carrier concentration can be altered in contact with CO [ 205 ]. The alternation of gate voltage threshold by carrier concentration change is used to determine CO concentration [ 202 , 206 ].…”

Section: Dissolved Co Measurement Methodsmentioning

confidence: 99%

“…The alternation of gate voltage threshold by carrier concentration change is used to determine CO concentration [ 202 , 206 ]. MOS, metal-insulator-semiconductor (MIS), and suspended gate type of FET CO sensors were reported using palladium [ 202 ] or Pd-PdO mixture [ 205 ], porous Pt-SnO 2 mixture [ 206 ] or Pt-WO 3 mixture [ 207 ], and Al 2 O 3 [ 208 ] as the gate materials, respectively.…”

Section: Dissolved Co Measurement Methodsmentioning

confidence: 99%

“…The sensitivity and selectivity of FET CO sensors are determined by the gate material and/or the gate surface nanostructure [ 207 , 209 ]. Current gate materials were reported with inferior selectivity to H 2 [ 203 ], CH 4 [ 209 ], and ethanol [ 205 ]. Their response time ranged from 75 s [ 207 ] to several hundred seconds [ 203 ].…”

Section: Dissolved Co Measurement Methodsmentioning

confidence: 99%

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Review of Dissolved CO and H2 Measurement Methods for Syngas Fermentation

Dang

Wang

Atiyeh

2021

Sensors

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Syngas fermentation is a promising technique to produce biofuels using syngas obtained through gasified biomass and other carbonaceous materials or collected from industrial CO-rich off-gases. The primary components of syngas, carbon monoxide (CO) and hydrogen (H2), are converted to alcohols and other chemicals through an anaerobic fermentation process by acetogenic bacteria. Dissolved CO and H2 concentrations in fermentation media are among the most important parameters for successful and stable operation. However, the difficulties in timely and precise dissolved CO and H2 measurements hinder the industrial-scale commercialization of this technique. The purpose of this article is to provide a comprehensive review of available dissolved CO and H2 measurement methods, focusing on their detection mechanisms, CO and H2 cross interference and operations in syngas fermentation process. This paper further discusses potential novel methods by providing a critical review of gas phase CO and H2 detection methods with regard to their capability to be modified for measuring dissolved CO and H2 in syngas fermentation conditions.

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“…Another approach for amplification of a sensor signal is the incorporation of the sensor material within the gate structure of a field-effect transistor ͑FET͒; this concept has been demonstrated in FET-based chemical and gas sensors in which gas or ion adsorption or absorption in the gate structure results in a shift in transistor threshold voltage and, consequently, amplified response in the transistor channel conductance or subthreshold current. 2,3 In this letter, we describe the design, fabrication, and demonstration of a transistor-amplified magnetic field sensor in which a granular tunnel magnetoresistive ͑TMR͒ Co x (SiO 2 ) 1Ϫx thin film is incorporated within the gate of a p-channel Si metal-oxide-semiconductor-field-effect transistor ͑MOSFET͒ as shown in Fig. 1.…”

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confidence: 99%

A monolithic field-effect-transistor-amplified magnetic field sensor

Schaadt

Sankar

et al. 1999

Applied Physics Letters

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We propose and demonstrate the operation of a monolithic field-effect-transistor-amplified magnetic field sensor device, in which a tunnel-magnetoresistive ͑TMR͒ material is incorporated within the gate of a Si metal-oxide-semiconductor-field-effect transistor. A fixed voltage is applied across the TMR layer, which leads charge to build up within the gate. Applying or changing an external magnetic field causes a change in the charge within the TMR layer and, consequently, a shift in the transistor threshold voltage, which leads to an exponential change in subthreshold current I DS sub and a quadratic change in saturation current I DS sat . The application of a 6 kOe magnetic field at room temperature leads in our device to an absolute change in I DS sub three times as large and in I DS sat 500 times as large as the corresponding change in current through the TMR layer alone. The relative change in I DS sub is a factor of four larger than that in the current through the TMR layer. © 1999 American Institute of Physics. ͓S0003-6951͑99͒04431-9͔Magnetic field sensors with improved sensitivity at room temperature are highly desirable for a variety of applications, perhaps most notably in future magnetic data storage systems. Approaches for amplification of response based on incorporation of sensor materials into electronic device structures have been developed for a variety of sensor applications. In the spin-valve transistor, 1 a giantmagnetoresistive thin film is incorporated as the base layer in a metal-base transistor. A field-dependent base transport factor then leads to amplified collector current response in the transistor. However, the fabrication of these devices requires vacuum metal bonding, and lithographic processing is difficult. Another approach for amplification of a sensor signal is the incorporation of the sensor material within the gate structure of a field-effect transistor ͑FET͒; this concept has been demonstrated in FET-based chemical and gas sensors in which gas or ion adsorption or absorption in the gate structure results in a shift in transistor threshold voltage and, consequently, amplified response in the transistor channel conductance or subthreshold current. 2,3 In this letter, we describe the design, fabrication, and demonstration of a transistor-amplified magnetic field sensor in which a granular tunnel magnetoresistive ͑TMR͒ Co x (SiO 2 ) 1Ϫx thin film is incorporated within the gate of a p-channel Si metal-oxide-semiconductor-field-effect transistor ͑MOSFET͒ as shown in Fig. 1. The basic concept is, however, applicable to any FET, as well as other magnetoresistive materials in which stored charge associated with electrical current flow is present. The sensor device was fabricated employing a nonself-aligned process acceptable because of the large device dimensions (50 mϫ1000 m gate͒. The source and drain regions were formed by boron diffusion into an n-type Si wafer (N D ϳ2ϫ10 15 cm Ϫ3 ) with a patterned oxide mask. The 20 nm lower gate oxide was formed by dry thermal oxidation, and Al ...

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Performance of Carbon monoxide-sensitive MOSFET's with metal-Oxide semiconductor gates

Cited by 33 publications

References 1 publication

Gas sensing properties of copper gate metal–oxide–semiconductor capacitors

Gas sensing properties of copper gate metal–oxide–semiconductor capacitors

Review of Dissolved CO and H2 Measurement Methods for Syngas Fermentation

A monolithic field-effect-transistor-amplified magnetic field sensor

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