Performance improvements of IGZO and ZnO thin‐film transistors by laser‐irradiation treatment

Yang, Yahui; Yang, Shanmin; Chou, Kan‐Sen

doi:10.1889/jsid19.3.247

Cited by 8 publications

(5 citation statements)

References 17 publications

(17 reference statements)

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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“…Therefore, in order to prepare high quality thin films, the removal of impurities is crucial. In order to prepare high quality metal oxide thin films, it is necessary not only to remove the impurities contained in the precursors, but also to provide enough energy to promote the Polycondensation and the densification of the thin films to form the metal-oxygen-metal (M-O-M) lattice structure [52][53][54][55]. The improvement of the lattice structure and the densification of the thin film help to reduce the traps and the potential barrier, increase the carrier mobility, and then improve the device performance of MOS-TFT [43,47,53,54,[56][57][58][59][60].…”

Section: Active Layer Thin Films Prepared By Sol-gel Methodsmentioning

confidence: 99%

“…Therefore, the laser treatment can effectively decompose the impurities related to the precursor, remove the metal oxide defects, and reorder the metal oxide structure instantly (<100 ns) at a lower substrate temperature (RT). Laser acting on thin films can not only produce thermal effect through instantaneous high energy radiation, but also produce photoactivation effect by high energy photons [43,53,67,68]. The photoactivation effect is that the residual metal ligands in the precursor films are photolyzed by high energy photons to produce free radicals.…”

Section: Active Layer Thin Films Prepared By Sol-gel Methodsmentioning

confidence: 99%

“…The high-energy photons generated by the laser induced the photo assisted condensation reaction, resulting in the formation of metal oxide bonds by metal hydroxides, and dehydroxylation reaction at the same time to remove residual impurities [62]. Dellis Micromachines 2021, 12, x FOR PEER REVIEW only produce thermal effect through instantaneous high energy radiation duce photoactivation effect by high energy photons [43,53,67,68]. The pho fect is that the residual metal ligands in the precursor films are photolyzed photons to produce free radicals.…”

Section: Active Layer Thin Films Prepared By Sol-gel Methodsmentioning

confidence: 99%

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Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

et al. 2021

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The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.

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“…Some studies also reported on the effect of laser processing on intrinsic ZnO TFTs. These studies using various laser systems such as XeCl [3], KrF [6,7], Nd:YAG [4,8,9], indicated that laser annealing has the potential to induce enhancements in crystallinity and field effect mobility which are comparable to the effects produced by thermal annealing at high temperatures. From the previous studies, it is evident that excimer laser annealing can be employed alongside sputtering to produce commercially viable ZnO based TFTs with minimal production steps [3].…”

Section: Introductionmentioning

confidence: 99%

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

Tsakonas¹,

Кузнецов²,

Cranton³

et al. 2017

J. Phys. D: Appl. Phys.

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We report the low temperature (T<70 ºC) fabrication of ZnO thin films (~140 nm) with Hall mobility of up to 17.3 cm 2 V-1 s-1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T<70 ºC and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging the films. Laser annealing of the films after aging in the lab under 25%-35% relative humidity and at an average illuminance of 120 lux resulted in an overall higher mobility and relatively low carrier concentration in comparison to the non-aged films that were laser processed immediately after deposition. A maximum overall measured Hall mobility of 17.3 cm 2 V-1 s-1 at a carrier density of 2.3×10 18 cm-3 was measured from a 1 GΩ as deposited and aged film after the laser treatment. We suggest that the aging of non-processed films reduces structural defects mainly at grain boundaries by air species chemisorption, with concomitant increase in thermal conductivity so that laser processing can have an enhancing effect. Such a processing combination can act synergistically and produce suitable active layers for TFT applications with low temperature processing requirements.

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Performance improvements of IGZO and ZnO thin‐film transistors by laser‐irradiation treatment

Cited by 8 publications

References 17 publications

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

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