Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Zhang, Lei; Yuan, Xibo; Wu, Xiaojie; Shi, Congling; Zhang, Jiahang; Zhang, Yonglei

doi:10.1109/tpel.2018.2834345

Cited by 283 publications

(97 citation statements)

References 22 publications

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“…The breakdown electric field of 4H-SiC is an order magnitude higher than Si, making SiC devices capable of sustaining higher voltage. Moreover, a SiC device can switch at higher speed because saturation drift velocity of such device is twice of Si and thus enable at least 5-10 times higher switching frequency [3], [10], [11]. Up until now, SiC devices, such as SiC MOSFET, Schottky diode, junction gate field-effect transistor (JFET), and insulated-gate bipolar transistor (IGBT), have been produced or demonstrated.…”

Section: Introductionmentioning

confidence: 99%

“…Up until now, SiC devices, such as SiC MOSFET, Schottky diode, junction gate field-effect transistor (JFET), and insulated-gate bipolar transistor (IGBT), have been produced or demonstrated. Among these devices, SiC MOSFET has received most of the attention due to its promising capabilities of replacing Si IGBT in power electronics systems [11], [12].…”

Section: Introductionmentioning

confidence: 99%

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Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent with aluminum wires. In this article, low parasitic inductance and high-efficient cooling interconnection techniques for Si power modules, which are the foundation of packaging methods of SiC ones, are reviewed first. Then, attempts on developing packaging techniques for SiC power modules are thoroughly overviewed. Finally, scientific challenges in the packaging of SiC power module are summarized.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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show abstract

“…This is a general trend in all areas of technology. High power density, higher switching frequency, and reduced overall dimensions of passive components and power electronic converters are possible due to the use of power transistors made using silicon carbide (SiC) or gallium nitride (GaN) technology [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Challenges and Design Requirements for Industrial Applications of AC/AC Power Converters without DC-Link

Szcześniak

2019

Energies

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AC/AC converters that do not have a DC energy storage element, such as a matrix chopper and a matrix converter, are increasingly becoming alternatives to conventional two-stage AC/DC/AC converters and thyristor choppers. In such systems, the main DC-link capacitor does not exist, so the system provides more reliable operation and makes it possible to reduce the financial costs of its construction. It should be noted that AC/AC converters without an energy storage element in a form of DC-link capacitors have not been implemented on an industrial scale. The reasons involve technical aspects and cost components. The main aim of this paper is to present some of the challenges and selected design requirements for industrial applications of AC/AC high reliability power converters.

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“…Alternatively, 3L NPC and T-NPC inverters feature the following benefits: (1) lower switching losses; voltage across the device is half of the DC-link voltage; and (2) lower output current distortion. Furthermore, the T-NPC inverters incorporate additional advantages such as lower conduction losses when compared with the NPC inverter, being the better choice for low voltage applications [12,13].Most of the state-of-the-art comparisons between the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and Si IGBT based inverters are done on the device level or in 2L VSIs [14,15] or hybrid topologies such as the H8 inverter [16]. Recently, also some multilevel Si IGBT based, SiC MOSFET based, or gallium nitride (GaN) based topologies have been compared, such as the single phase T-type inverter [17,18], advanced inverter topologies [19], or the single phase two stage decoupled active neutral point clamped (NPC) converter [20].…”

mentioning

confidence: 99%

“…Most of the state-of-the-art comparisons between the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and Si IGBT based inverters are done on the device level or in 2L VSIs [14,15] or hybrid topologies such as the H8 inverter [16]. Recently, also some multilevel Si IGBT based, SiC MOSFET based, or gallium nitride (GaN) based topologies have been compared, such as the single phase T-type inverter [17,18], advanced inverter topologies [19], or the single phase two stage decoupled active neutral point clamped (NPC) converter [20].…”

mentioning

confidence: 99%

Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives

et al. 2019

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Wide bandgap (WBG) power devices such as silicon carbide (SiC) can viably supply high speed electrical drives, due to their capability to increase efficiency and reduce the size of the power converters. On the other hand, high frequency operation of the SiC devices emphasizes the effect of parasitics, which generates reflected wave transient overvoltage on motor terminals, reducing the life time and the reliability of electric drives. In this paper, a SiC metal-oxide-semiconductor field-effect transistor (MOSFET) based two level (2L) inverter is systematically studied and compared to the performance of Si insulated-gate bipolar transistor (IGBT) based three level (3L) neutral point clamped (NPC) inverter topologies, for high speed AC motor loads, in terms of efficiency, overvoltages, heat sink design, and cost. A fair comparison was introduced for the first time, having the same output voltage capabilities, output current total harmonic distortion (THD), and overvoltages for the three systems. The analysis indicated the convenience of using the SiC MOSFET based 2L inverter for lower output power. In the case of the maximum output power, the heat sink volume was found to be 20% higher for the 2L SiC based inverter when compared to 3L NPC topologies. Simulations were carried out by realistic dynamic models of power switch modules obtained from the manufacturer's experimental tests and verified both in the LTspice and PLECS simulation packages.Even though the modern switching devices offer many benefits, they still experience many problems mainly connected to the fast switching such as high dv/dt-rates, also in combination with impedance mismatch (machine against cabling and surge), high di/dt, crosstalk [5], etc. Moreover, the fast switching leads to transient overvoltage which increases the strain for the machine's insulation and accelerated aging [4,6]. This, together with the fact that often, the power cable between the inverter and the motor is long, leads to significant voltage overshoot due to reflected wave phenomenon. All of these problems resulting from the high dv/dt spikes could degrade the reliability and efficiency of motor drive systems [7][8][9]. In some cases, motor transient peak voltages can be even up to 3-4-times the DC bus voltage [10]. Moreover, besides the effects of the overvoltages on a whole winding, also the stress on the inter-turn insulation of the motor windings must be considered, especially as the rise time becomes shorter. This can result in relevant voltage drops across one turn, going beyond the inter-turn insulation design limit considered under sinusoidal operation [6,7].Currently, insulated-gate bipolar transistor (IGBT) based two level (2L) VSI, and three level (3L) neutral point clamped (NPC) and T-type neutral point clamped (T-NPC) inverters are commercially available and widely used by industry. However, in some cases, the application of 2L inverters is limited due to several drawbacks. They are usually connected with increased losses (in the case of higher fundamental freq...

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Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Cited by 283 publications

References 22 publications

Review of Packaging Schemes for Power Module

Review of Packaging Schemes for Power Module

Challenges and Design Requirements for Industrial Applications of AC/AC Power Converters without DC-Link

Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives

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