Performance Evaluation and Reliability Issues of Junctionless CSG MOSFET for RFIC Design

Pratap, Yogesh; Haldar, Subhasis; Gupta, Rashmi; Gupta, Mridula

doi:10.1109/tdmr.2013.2296524

Cited by 79 publications

(28 citation statements)

References 31 publications

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“…A comparative study of the single material gate and gate material engineering surrounding-gate MOSFET has been performed in ref. [132]. In addition to this, the effect of interface trap charges on the RF and linear distortion analysis also has been presented.…”

Section: Surrounding-gate Mosfetmentioning

confidence: 99%

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

Himangi¹,

Srivastava²,

Singh³

2018

JESTR

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In this review, authors have retrospect the state-of-art dimension scaling and emerging other non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and Cylindrical Surrounding Double-Gate (CSDG) MOSFET. These are presented for the future devices to reduce the short channel effects for the next generation communication system as the dimension of device approaches to the nanometer regime. The discussion on advantages and compact modeling approaches of both the MOSFETs have been presented. Moreover, these compact models are very useful to understand the physical characteristics of devices and also necessary for the circuit simulators, which are presently most growing research areas. Therefore, a review of the various approaches to developing the complete compact models for DG MOSFETs and CSDG MOSFET is necessary. The significant effect that is the short channel effects are also looked upon with the help of reported literatures. In addition to this, with the next generation communication prospective, the DG MOSFETs and CSDG MOSFETs have been discussed, which prove to be advantageous for the Terahertz (THz) frequency regime where high speed data transmission and reduced power consumption are the major requirements.

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Section: Surrounding-gate Mosfetmentioning

confidence: 99%

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

Himangi¹,

Srivastava²,

Singh³

2018

JESTR

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“…I on /I off ratio of high-k-4H-SiC-DS-SB-GAA is higher than the conventional SB-GAA MOSFET. The transconductance of any device decides the gain of the device and its optimum bias point should be high enough [27] to have high cut off frequency. Figure 2. (b) and (c) show variation of g m and f t respectively as a function of applied gate voltage.…”

Section: Device Structure and Discriptionmentioning

confidence: 99%

4H-SiC-Dopant Segregated Schottky Barrier Cylindrical Gate All Around MOSFET for high speed and high power microwave applications

Kumar

Gupta

Haldar

et al. 2014

2014 IEEE 6th India International Conference on Power Electronics (IICPE)

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This paper presents extensive study of proposed 4H-Silicon Carbide (SiC) based Dopant Segregated (DS) Schottky Barrier (SB) Cylindrical Gate All Around (CGAA)MOSFET with high-k gate dielectric for hostile environment such as high temperature and radiation exposure for high power microwave applications. The Analog/RF performance of SiC-CGAA has been investigated by exploiting temperature variation from 300 K to 500 K, along with the leverage of Schottky-Barrier (SB) Source/Drain and Dopant Segregation (DS). DS is primarily used to reduce the ambipolar behavior of SB MOSFET and boost the performance of the device. Analog/RF performance in terms of main figure of merits like I on /I off , transconductance (g m ), Early Voltage, Stern Stability Factor (K), cut-off frequency (f t ) has been carried out using ATLAS-3D device simulator.

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“…Out of them, CSG is one of the most promising device structures as it provides control of the channel from all directions. Recent research work done on JL-CSG MOSFET suggests it as a promising candidate to suppress SCEs [13][14][15]. Although, the JL-CSG MOSFET is a viable candidate for replacing the conventional bulk MOSFET, the hot carrier induced degradation still persists as a serious device reliability issue [16].…”

Section: Introductionmentioning

confidence: 99%

Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET

Sharma

Jain

Pratap

et al. 2016

Solid-State Electronics

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Performance Evaluation and Reliability Issues of Junctionless CSG MOSFET for RFIC Design

Cited by 79 publications

References 31 publications

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

4H-SiC-Dopant Segregated Schottky Barrier Cylindrical Gate All Around MOSFET for high speed and high power microwave applications

Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET

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