Advanced MOSFET Technologies for Next Generation Communication Systems  - Perspective and Challenges: A Review

Himangi, Sood; Srivastava, Viranjay M.; Singh, Ghanshyam

doi:10.25103/jestr.113.25

Cited by 16 publications

(5 citation statements)

References 68 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…V GS ≤ V TH . After providing V GS ≥ V TH , surface potential starts increasing resulting in increase in injection electron exponentially (movement of electron is from source to body in case of N-type channel and movement of electron from body to source in case of P-type channel) is seen because of increase in energy level of electrons [16][17][18][19][20][21][22].…”

Section: Restrictions Imposed By Electron Drift Characteristicsmentioning

confidence: 99%

Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

Singh*,

Kumar

2020

IJITEE

View full text Add to dashboard Cite

In last 3 decades or so as we have scale down the MOSFETs with single-gate to nanometer region in order to maintain the performance level high but single gate MOSFETs still continue to suffers from the interface coupling, channel orientation, channel mobility, leakage current, switching delay and latch up. Further, the additional parameters such as short channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface scattering, impact ionization, subthreshold swing and volume inversion has shown result inform of increase in leakage current, decrease of inversion charge and decrease in the drive current since double-gate MOSFET came into existence, which relies on the exploration of novel higher mobility channel materials which might perform even better than current existing single gate MOSFETs. This paper compares double-gate MOSFET configuration and single-gate MOSFET configuration using different performance parameters and channel material configuration and additionally assessed different channel materials along with its structure orientation and the future applications.

show abstract

Section: Restrictions Imposed By Electron Drift Characteristicsmentioning

confidence: 99%

Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

Singh*,

Kumar

2020

IJITEE

View full text Add to dashboard Cite

show abstract

“…Process and design advancements are ongoing both domestically and internationally, such as the lowthreshold N+P dual MOS tube irradiation reinforcement design and process technology [1]. To address the short-channel effect in communication systems, emerging non-conventional MOSFET architectures, including dual gate (DG) MOSFETs and cylindrical-surrounded dual gate (CSDG) MOSFETs, have been proposed [2]. Techniques to increase linearity have been proposed, including deep N-wells, second harmonic short circuits, multi-gate transistor compensation, PMOS tube compensation, NMOS tube compensation, common gate tube gate capacitance compensation, and others [3].…”

Section: Introductionmentioning

confidence: 99%

Research Progress on Metal-Oxide Semiconductor Field Effect Transistors

Wang

2023

HSET

View full text Add to dashboard Cite

Metal-Oxide Semiconductor Field Effect Transistors (MOSFETs) have been constantly pursued in recent years as one of the indispensable components in modern electronic equipment, with better MOSFETs and a wider range of MOSFET applications. This study presents the classification and characteristics of MOSFETs briefly, investigates their applications in various aspects, and assesses the potential future development patterns of MOSFETs. This thesis research shows that different MOS tubes have different characteristics. MOSFETs mainly use enhanced N- and P-channel Metal-Oxide Semiconductor (NMOS and PMOS), complementary Metal-Oxide Semiconductor (CMOS), and neuronal Metal-Oxide Semiconductor (MOS). NMOS has the characteristics of less switching loss, a low threshold voltage, and is good for improving integration, but the temperature rises, etc. PMOS has the characteristics of being suitable for high-end drives and easy to drive and control, but the working speed is low and the switching loss is high. CMOS has the characteristics of good temperature stability, radiation resistance, and process complexity. Neuronal MOS can change the threshold voltage of the first input gate, and the floating gate charge can be preserved for a long time, so it is suitable for neural network applications. MOSFET can also be applied to switching and sensor applications. MOSFET applications generally belong to the fields of digital and analog circuits, communications, computers, etc. However, the application of MOS tubes in some fields still has defects. It is concluded that MOS tubes can be better used in other fields in the future, such as environmental monitoring and protection, chemical process control, etc. The future direction of MOS tubes includes higher performance, higher integration, fewer limitations, and so on. This thesis provides the direction for improvement of MOSFET research, which provides the basis and reference for subsequent research.

show abstract

“…The capacitor is without the constraints of high resistivity and optical absorption from the use of a metal current spreading layer. The physics of using a capacitor layer for accumulation or depletion of charges through band bending is analogous to the gate bias of a field effect transistor (FET) [18], [19]. Integration of a capacitor can allow for additional utilization of band bending to aid in hole injection, while the p-contact still acts to forward bias the diode and as the steady-state source of holes.…”

Section: Introductionmentioning

confidence: 99%

Electrostatic Field Effect Light-Emitting Diode

2020

View full text Add to dashboard Cite

Gallium Nitride (GaN) based light-emitting diodes (LEDs) suffer from the persistent issue of high resistivity of the p-type layer, due to inefficient dopant activation at room temperature. Here, a novel Electrostatic Field Effect LED (EFELED) is demonstrated to solve this issue by introducing significantly more holes into the LED active region for the first time. An increase in drive current is observed through application of positive biases to a capacitor layer on top of a 436 nm InGaN/GaN LED. With a positive bias of 5 V applied to the capacitor, the EFELED showed more than a twofold increase in optical output from electroluminescence (EL) measurements, as well as over 115% enhanced external quantum efficiency (EQE). Modulation of holes can also be achieved through the novel capacitor integration in the EFELED, which leads to light output control. This proposed EFELED provides an alternative method to efficiently improve hole injection for the active region through energy band bending, which addresses the fundamental p-type doping issue for LED devices.

show abstract

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

Cited by 16 publications

References 68 publications

Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

Research Progress on Metal-Oxide Semiconductor Field Effect Transistors

Electrostatic Field Effect Light-Emitting Diode

Contact Info

Product

Resources

About