Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications
Akshat Singh*,
Manoj Kumar
Abstract:In last 3 decades or so as we have scale down the MOSFETs with single-gate to nanometer region in order to maintain the performance level high but single gate MOSFETs still continue to suffers from the interface coupling, channel orientation, channel mobility, leakage current, switching delay and latch up. Further, the additional parameters such as short channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface scattering, impact ionization, subthreshold swing and volume inv… Show more
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