Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric

Vimala, P.; Samuel, T. S. Arun; Nirmal, D.; Панда, А. К.

doi:10.1016/j.ssel.2019.10.001

Cited by 28 publications

(11 citation statements)

References 20 publications

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“…[ 68–70 ] In addition, in TFET research, which relies on the intrinsic semiconductor characteristics, it is still difficult to implement superior NDR characteristics because of the limitation in controlling the electron or hole concentration in the doping region. Therefore, many studies have attempted to fabricate advanced devices through structural/operational improvements using multiple gating, [ 71–73 ] dielectric engineering, and [ 74 ] internal polarization. [ 75,76 ] In 2019, Wu et al.…”

Section: Type Of External Forcementioning

confidence: 99%

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Woo

Kim

Yoo

2022

Adv Elect Materials

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Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, it is difficult to reach a higher level of electrical characteristics with only a combination of materials based on their intrinsic characteristics. External forces, such as electric fields, light, and temperature, can modulate the electron and hole concentration and control the tunneling probability and the electrical characteristics of heterostructure electronics. Recent articles employing external forces to improve the BTBT performance and demonstrate the mechanism of BTBT devices are summarized with five representative external forces. Moreover, the utility of the external force‐induced performance improvement of the BTBT device is also discussed by providing various applications.

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Section: Type Of External Forcementioning

confidence: 99%

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Woo

Kim

Yoo

2022

Adv Elect Materials

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“…Besides such scaling restrictions, a low value of ION is a drawback of TFETs due to reduced carrier tunneling [8]. Thus, to acquire a higher ION and steeper SS, different modified structures are utilized via the introduction of heterojunction engineering over the source-channel interface or by using work function engineering [9][10][11]. In order to enhance the TFET performance, both double and multi-gate methods are grown to another level, where instead of independent metals with a single work function, a binary metal alloy ab1 - with linearly graded work functions are considered to be gate electrodes [12].…”

Section: Introductionmentioning

confidence: 99%

Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket

Selvi¹,

Dhanalakshmi²

2022

J. Nano- Electron. Phys.

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In the present paper, the linearly graded work function (LG-W) characteristics are explored by using binary metal alloy ab1 - gate electrode composition in a high-k gate stack with a dielectric pocket in vertically aligned TFET (VTFET). The VTFET device is constructed using a binary metal alloy gate electrode with a linearly graded work function and an air pocket. The proposed structure performance metrics are evaluated and compared to the state-of-the-art. The integration of LG-W with gate-stack VTFET along with air pocket, namely SG-LG-VTFET with air pocket, reveals performance improvement via metrics such as device ON-current (ION), subthreshold swing (SS), transconductance (gm) as well as transconductance generation efficiency (TGE). SG-LG-VTFET with air pocket generates SS of 13.92 mV/dec. Further, the device exhibits a higher ION (3.610 -5 A/µm) with an ION/IOFF ratio of 10 12 . Due to the inclusion of the LG-W and air pocket, a narrow band-bending is observed, thus resulting in higher tunneling and steeper SS. A high-k stacked dielectric material enhances the capacitive coupling. The performance of the device is compared with the VTFET device in the absence of a dielectric pocket. The dielectric pocket increases the electric field, which is a desirable phenomenon for increasing the ON-current. For future applications, the scaling in SS is further possible that can increase the electron tunneling rate.

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“…But models presented in literature are either based on iterative methods or several assumptions. [37][38][39][40][41][42] However, no compact closed form of drain current analytical expression is available in the literature for a single gate hetero dielectric TFET.…”

Section: Introductionmentioning

confidence: 99%

“…An analytical compact model is required for the faster circuit simulation to understand the working principle of the HDG TFET in depth. But models presented in literature are either based on iterative methods or several assumptions 37–42 . However, no compact closed form of drain current analytical expression is available in the literature for a single gate hetero dielectric TFET.…”

Section: Introductionmentioning

confidence: 99%

Drain current model for a hetero‐dielectric single gate tunnel field effect transistor (HDSG TFET)

Singh

Fui

Soong

2021

Int J Numerical Modelling

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Tunnel field effect transistor (TFET) is a potential candidate to replace CMOS in deep-submicron region due to its lower SS (subthreshold swing, <60 mV/ decade) at room temperature. However, the conventional TFET suffers from low tunneling current and high ambipolar current. To overcome these two shortcomings, a new structure, known as Hetero-dielectric gate TFET (HDG TFET), has been proposed in the literature. To analyze the electrical characteristics of this structure, a closed form of analytical expression of current is required. This paper presents the analytical current model for Hetero-dielectric single gate (HDSG) TFET structure without using any iterative method. The developed analytical models show a good agreement with 2-D TCAD simulator results. The model is used to study the electrical behavior of the proposed device under various physical and bias variations.

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Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric

Cited by 28 publications

References 20 publications

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket

Drain current model for a hetero‐dielectric single gate tunnel field effect transistor (HDSG TFET)

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