“…Such high velocity mainly stems from the light effective mass (m * ) of the dominant Γ-valley. However a small m * decreases the Density-of-States (DoS) in the channel, possibly inducing a so called "DoS bottleneck" that partly neutralizes the benefits that III-V nMOSFETs can deliver in terms of ballistic ON-current [7], [8], [9], [10], [11], [12]. Simulations including scattering have also shown that the low DoS of III-V, although resulting in lower scattering rates [13], [14], prevents reaching ON-current values significantly larger than in Si MOSFETs at nanoscale lengths [15], [16], [17].…”