Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Hull, Brett; Sumakeris, Joseph J.; O’Loughlin, Michael J.; Zhang, Qingchun; Richmond, Jim; Powell, Adrian R.; Imhoff, Eugene A.; Hobart, Karl D.; Rivera-Lopez, A.; Hefner, Allen R.

doi:10.1109/ted.2008.926655

Cited by 80 publications

(32 citation statements)

References 19 publications

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“…4H-SiC junction barrier Schottky (JBS) rectifiers as a key device in power conversion applications have been widely investigated in recent years [2]- [3]. The JBS diodes have a Schottky rectifier structure with pn junction grids integrated into the drift region and thus behave similar to Schottky diodes in the on-state and switching characteristics while show reverse characteristics similar to PiN diodes [4].…”

Section: Introductionmentioning

confidence: 99%

Simulation and characterization of ion irradiated 4H-SiC JBS diode

Sharma

Hazdra

Popelka

2015

2015 22nd International Conference Mixed Design of Integrated Circuits &Amp; Systems (MIXDES)

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This paper presents the development of simulation models for proton and carbon irradiated 4H-SiC junction barrier Schottky (JBS) diodes. Compared to protons, heavier carbon ions introduce more defects with deeper levels in the SiC bandgap and more stable damage. For the first time, the free carrier concentration profile extracted from CV simulations for irradiated JBS diode has been compared with experimental data. The simulation exhibit excellent matching with experimental data and can be very useful for the optimization of SiC power devices. Furthermore, the developed model can be used for the simulation of carrier life time control in PiN diode.

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Section: Introductionmentioning

confidence: 99%

Simulation and characterization of ion irradiated 4H-SiC JBS diode

Sharma

Hazdra

Popelka

2015

2015 22nd International Conference Mixed Design of Integrated Circuits &Amp; Systems (MIXDES)

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“…JBS diodes consist of an interconnected grid of p-type regions in the n-type drift layer and combine the advantages of both SBD and p-i-n diode. JBS diodes are commonly used in many fields including in power supplies, aerospace power systems, high-performance communication systems, and power conversion systems because of their small conduction loss and faster switching speed [6].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

Song

Yuan

Han

et al. 2015

Sci. China Technol. Sci.

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There is a great interest in monolithic 4H-SiC Junction Barrier Schottky (JBS) diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 µm 4H-SiC epitaxial layer doped to 6×10 15 cm 3 . JBS diodes with an active area of 30 mm 2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm 2 . A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 A through the use of an optimum multiple floating guard rings (MFGR) termination, which is about 87.2% of the theoretical value. The differential specific-on resistance (R SP-ON ) was measured to be 3.3 m cm 2 , leading to a FOM (VB 2 /R SP-ON ) value of 0.78 GW/cm 2 , which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices. 4H-SiC, JBS, current capability, breakdown voltageCitation: Song Q W, Yuan H, Han C, et al. Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current. Sci China Tech Sci,

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“…In spite of the significant research efforts invested by many groups, these carrier transport mechanisms are still not well understood. Several publications highlight on the change of ideality factor, forward voltage, relative light intensity, carrier lifetime and reverse recovery time of LEDs with temperature (Weling et al 2011;Acharya and Vyavahare 1999;Dalapati et al 2013;Bergman et al 1995;Chen et al 2012;Hull et al 2008;Bolotnikov et al 2007). These literatures show that the variations of these factors with temperature for different types of LED are not same.…”

Section: Introductionmentioning

confidence: 99%

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

2014

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The high power light emitting diode (LED) based on AlGaInP is tested on line at temperatures from 350 to 77 K. The experimental data are fitted to measure the relationship between temperature and the ideality factor, the forward voltage, the relative light intensity emitted by the LED, the carrier lifetime and the reverse recovery time of the device. These results show that temperature has a significant influence on different properties of such LED. Finally, it is important to note that an optimization among the different parameter values, while some increasing and others decreasing with temperature change, as indicated in the present study, is essential and must be considered for design involving the device, particularly, for any low temperature application.

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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Cited by 80 publications

References 19 publications

Simulation and characterization of ion irradiated 4H-SiC JBS diode

Simulation and characterization of ion irradiated 4H-SiC JBS diode

Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

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