Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory

Govoreanu, B.; Wellekens, D.; Haspeslagh, L.; Brunco, D.P.; Vos, Joeri De; Aguado, Daniel Ruiz; Blomme, Pieter; Zanden, K. van der; Houdt, J. Van

doi:10.1016/j.sse.2008.01.012

Cited by 21 publications

(14 citation statements)

References 8 publications

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“…On the other hand, (i) control of the parasitic IPD leakage during programming requires electrically thicker IPD stacks [7]; (ii) control of the FG charge loss during retention requires physically thicker IPDs. In this work, we focus on IPDs targeting EOTs in the range of 5-8 nm.…”

Section: Resultsmentioning

confidence: 99%

Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

Govoreanu

Degraeve

Houdt

et al. 2008

2008 IEEE International Electron Devices Meeting

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In this work, we investigate the floating gate (FG) cell leakage through high-k interpoly dielectrics (IPDs) using a statistical approach. The impact of defects on stack scalability is addressed from a NAND technology perspective. Trap distributions are extracted from high-temperature retention tests carried out on Al 2 O 3 -based IPDs. Extracted material parameters are used together with a newly developed Monte-Carlo leakage/retention simulator in order to investigate the behavior of single-and multitrap leakage paths on large Flash memory arrays and predict the failure rate.

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Section: Resultsmentioning

confidence: 99%

Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

Govoreanu

Degraeve

Houdt

et al. 2008

2008 IEEE International Electron Devices Meeting

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“…The MOCVD films showed full crystallization at a higher temperature of 1100˚C. Crystallization of the Al 2 O 3 following a post-deposition anneal (PDA) leads to a contraction of the layer, which can be as large as 16 % for an H 2 O-based ALD film [11] and around 10 % for an O 3 -based film. If the film thickness reduction is accounted for, the dielectric constant of the material remains around 9.3-9.5 and is little impacted by the PDA temperature.…”

Section: Al 2 O 3 -Based Ipd'smentioning

confidence: 99%

The Flash Memory Cell for the Nodes to Come: Material Requirements from a Device Perspective

Govoreanu

Kittl

Vos³

et al. 2009

ECS Trans.

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The quest for mass storage and the diversity of end-user applications led to an aggressive scaling of the NAND Flash memory. A key factor to its success is the high density integration potential, which allows fabrication of large memory arrays. Reduction of the feature size below 40 nm may, however, require modifications of the conventional floating gate cell architecture, due to lack of physical space between neighboring cells, which no longer allows wrapping of the control gate over the floating gate. This has consequences on both intra- as well as inter-cell levels, calling for the introduction of high-k dielectrics in Flash memory. In this paper, we take a top-down stance and translate device characteristics into material requirements and/or points of attention that need to be addressed in order to ensure a successful continued scaling of the Flash memory for the upcoming technology generations.

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“…[7] Hf x Al 1-x O y layers have also been studied because their dielectric permittivity k is higher than that of Al 2 O 3 , in combination with rather large band gap values. [8][9][10][11] As an alternative to hafnium oxidebased dielectrics, rare-earth oxide-based materials have also been considered. For La [12,13] A related material is LaAlSiO x , which can be formed by thin film reaction of LaAlO 3 with SiO 2 during high-temperature annealing, similar to other rare-earthcontaining oxides.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Gadolinium Aluminate using Gd(ⁱPrCp)₃, TMA, and O₃ or H₂O

Adelmann

Pierreux

Swerts

et al. 2010

Chemical Vapor Deposition

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Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory

Cited by 21 publications

References 8 publications

Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

The Flash Memory Cell for the Nodes to Come: Material Requirements from a Device Perspective

Atomic Layer Deposition of Gadolinium Aluminate using Gd(ⁱPrCp)₃, TMA, and O₃ or H₂O

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Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory

Cited by 21 publications

References 8 publications

Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

The Flash Memory Cell for the Nodes to Come: Material Requirements from a Device Perspective

Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O

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Product

Resources

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Atomic Layer Deposition of Gadolinium Aluminate using Gd(ⁱPrCp)₃, TMA, and O₃ or H₂O