Performance and design of InGaAs/InP photodiodes for single-photon counting at 155 µm

Hiskett, Philip A.; Buller, Gerald S.; Loudon, A.; Smith, Jason M.; Gontijo, I.; Walker, Andrew; Townsend, Paul D.; Robertson, M.J.

doi:10.1364/ao.39.006818

Cited by 123 publications

(77 citation statements)

References 30 publications

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“…3) The mask design incorporates different diffused area curvatures in order to accommodate the smaller volume structures needed for low DCRs whilst avoiding edge breakdown effects, such as the 10-µm diameter devices (see later). The specific choice of the zinc diffused planar geometry was based on previous studies done by our research groups, which highlighted consistently lower DCRs in devices fabricated using this approach [6], [7], [14]. The device material was grown epitaxially by metal organic chemical vapor deposition.…”

Section: Device Structurementioning

confidence: 99%

“…More recently they have been employed in quantum key distribution [4] and noninvasive testing of VLSI circuits [5]. Commercially available InGaAs-InP avalanche photodiodes (APDs) designed for use in linear multiplication mode have been tested in Geiger mode [6], [7] in order to extend the spectral range of efficient single-photon detection to wavelengths greater than that afforded by the currently available Si-based single-photon avalanche diode (SPAD) detectors (i.e., wavelengths greater than 1 m). These InGaAs-InP detectors have exhibited good single-photon detection efficiency (SPDE) (SPDE > 10%) and subnanosecond timing jitter, however they have limited counting rates due to the severe deleterious effects of the afterpulsing phenomenon.…”

Section: Introductionmentioning

confidence: 99%

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Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

Pellegrini

Warburton

Tan

et al. 2006

IEEE J. Quantum Electron.

133

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Section: Device Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

Pellegrini

Warburton

Tan

et al. 2006

IEEE J. Quantum Electron.

133

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“…In recent years, the performance of InGaAs APDs as single-photon detectors for use in the fiber communication window around 1550 nm has been extensively studied by several groups [9]- [12]. The pulsed nature of the photon pairs allows us to use the APDs in a gated Geiger mode.…”

mentioning

confidence: 99%

All-fiber photon-pair source for quantum communications

Fiorentino

Voss

Sharping

et al. 2002

IEEE Photon. Technol. Lett.

274

283

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Abstract-In this letter, we present a source of quantum-correlated photon pairs based on parametric fluorescence in a fiber Sagnac loop. The photon pairs are generated in the 1550-nm fiber-optic communication band and detected with InGaAs-InP avalanche photodiodes operating in a gated Geiger mode. A generation rate 10 3 pairs/s is observed, which is limited by the detection electronics at present. We also demonstrate the nonclassical nature of the photon correlations in the pairs. This source, given its spectral properties and robustness, is well suited for use in fiber-optic quantum communication and cryptography networks.Index Terms-Fiber four-wave mixing, parametric amplifiers, photon counting, quantum communication, quantum cryptography. EFFICIENT generation and transmission of quantum-correlated photon pairs, especially in the 1550-nm fiber-optic communication band, is of paramount importance for practical realization of the quantum communication and cryptography protocols [1]. The workhorse source employed in all implementations, thus far [2] has been based on the process of spontaneous parametric down-conversion in second-order [ ] nonlinear crystals. Such a source, however, is not compatible with optical fibers as large coupling losses occur when the pairs are launched into the fiber. This severely degrades the correlated photon-pair rate coupled into the fiber, since the rate depends quadratically on the coupling efficiency. From a practical standpoint, it would be advantageous if a photon-pair source could be developed that not only produces photons in the communication band but also can be spliced to standard telecommunication fibers with high efficiency. Over the past few years, various attempts have been made to develop more efficient photon-pair sources, but all have relied on the down-conversion process [3]- [6]. Of particular note is [4], in which the effective of periodically poled silica fibers was used. In this letter, we report the first, to the best of our knowledge, photon-pair source that is based on the Kerr nonlinearity ( ) of standard fiber. Quantum-correlated photon pairs are observed and characterized in the parametric fluorescence of four-wave mixing (FWM) in dispersion-shifted fiber (DSF).The FWM process takes place in a nonlinear-fiber Sagnac interferometer (NFSI), shown schematically in Fig. 1. Previ- ously, we have used this NFSI to generate quantum-correlated twin beams in the fiber [7]. The NFSI consists of a fused-silica 50/50 fiber coupler spliced to 300 m of DSF having zero-dispersion wavelength nm. It can be set as a reflector with proper adjustment of the intraloop FPC to yield a transmission coefficient 30 dB. When the injected pump wavelength is slightly greater than , FWM in the DSF is phase matched [8]. Two pump photons of frequency scatter into a signal photon and an idler photon of frequencies and , respectively, where . Signal-idler separations of 20 nm can be easily obtained with use of commercial DSF [7]. The pump is a mode-locked train of 3-ps-long pulses that a...

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“…9a) have a distinct unity gain reference voltage, called the punch-through voltage [53], at which the electric field penetrates into the absorption region. Below this voltage, photogenerated carriers cannot travel through all layers of the device to reach the electrode to produce photocurrent before they recombine.…”

Section: Design Criteriamentioning

confidence: 99%

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Hall

Liu

2015

Nanophotonics

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While silicon single-photon avalanche diodes (SPAD) have reached very high detection efficiency and timing resolution, their use in fibre-optic communications, optical free space communications, and infrared sensing and imaging remains limited. III-V compounds including InGaAs and InP are the prevalent materials for 1550 nm light detection. However, even the most sensitive 1550 nm photoreceivers in optical communication have a sensitivity limit of a few hundred photons. Today, the only viable approach to achieve single-photon sensitivity at 1550 nm wavelength from semiconductor devices is to operate the avalanche detectors in Geiger mode, essentially trading dynamic range and speed for sensitivity. As material properties limit the performance of Ge and III-V detectors, new conceptual insight with regard to novel quenching and gain mechanisms could potentially address the performance limitations of III-V SPADs. Novel designs that utilise internal self-quenching and negative feedback can be used to harness the sensitivity of single-photon detectors, while drastically reducing the device complexity and increasing the level of integration. Incorporation of multiple gain mechanisms, together with self-quenching and built-in negative feedback, into a single device also hold promise for a new type of detector with single-photon sensitivity and large dynamic range.

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Performance and design of InGaAs/InP photodiodes for single-photon counting at 155 µm

Cited by 123 publications

References 30 publications

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

All-fiber photon-pair source for quantum communications

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

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