Performance advantage and energy saving of triangular-shaped FinFETs

Wu, K.; Ding, Wei-Wen; Chiang, Meng-Hsueh

doi:10.1109/sispad.2013.6650595

Cited by 7 publications

(3 citation statements)

References 3 publications

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“…Reduction in fin width leads to decrement in leakage due to SCEs. By optimizing input process parameters for a 22 nm triangular FinFET leakage current can be reduced up to 70% as compared to rectangular fin shape with same base fin width [6]. To overcome the gate oxide leakage current in CMOS devices high-k gate stack is used.…”

Section: Literature Reviewmentioning

confidence: 99%

Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

Shukla

Gill

Kaur

et al. 2017

Active and Passive Electronic Components

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Technology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET. For 10–30 nm channel length multigate MOSFETs have been considered as most promising devices and FinFETs are the leading multigate MOSFET devices. Process parameters can be varied to obtain the desired performance of the FinFET device. In this paper, evaluation of on-off current ratio (Ion/Ioff), subthreshold swing (SS) and Drain Induced Barrier Lowering (DIBL) for different process parameters, that is, doping concentration (1015/cm3 to 1018/cm3), oxide thickness (0.5 nm and 1 nm), and fin height (10 nm to 40 nm), has been presented for 20 nm triangular FinFET device. Density gradient model used in design simulation incorporates the considerable quantum effects and provides more practical environment for device simulation. Simulation result shows that fin shape has great impact on FinFET performance and triangular fin shape leads to reduction in leakage current and SCEs. Comparative analysis of simulation results has been investigated to observe the impact of process parameters on the performance of designed FinFET.

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Section: Literature Reviewmentioning

confidence: 99%

Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

Shukla

Gill

Kaur

et al. 2017

Active and Passive Electronic Components

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“…FinFETs [6][7][8] have been proposed as a method to replace traditional planar transistors [9]. Due to the conventional process, the profiles of fins tend to be trapezoidal or triangular [10][11][12][13]. Both Wu and Gaynor's teams have shown that the rectangular fins have better gate control ability and higher on-state current in simulation [11,12].…”

Section: Introductionmentioning

confidence: 99%

“…Due to the conventional process, the profiles of fins tend to be trapezoidal or triangular [10][11][12][13]. Both Wu and Gaynor's teams have shown that the rectangular fins have better gate control ability and higher on-state current in simulation [11,12]. According to the prediction of Moore's Law and the International Technology Roadmap for Semiconductors 2.0 (ITRS 2.0), the process node of the transistors scales down by 0.7 times every two years, while the operation voltage (V DD ) scales down by only about 0.9 times.…”

Section: Introductionmentioning

confidence: 99%

Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node

Kuo¹,

Chen²,

Chang³

et al. 2022

Semicond. Sci. Technol.

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This study investigates the impact of fin profiles under hot carrier stress, which defines different base widths: wide-base samples with the smallest slope, medium-base samples, and narrow-base samples with a larger slope. The performance of the narrow samples is better than the medium samples, regardless of transconductance, on-state current, subthreshold swing or drain-induced barrier lowering, demonstrating that the narrow profile samples’ mobility and gate control are better. In long channel devices, the trend of hot carrier degradation (HCD) is in agreement with previous references, and is dependent on the transverse electric field and the fin shapes. However, this trend does not exist for short-channel devices. Positive bias stress and technology computer aided design simulation are applied for investigation and to clarify the reasons for this abnormal HCD trend. Finally, by fitting the multiple vibrational excitation (MVE) mechanism, the slope of the trend lines in the short channel devices are found to indeed match the bending mode. In other words, the disappearance of the general trend between the HCD and fin profiles is caused by the change in the mechanism in the short-channel device. Because the MVE mechanism is independent from the electric field, the narrow profile fin shape more effectively promotes gate control and better performance without affecting the reliability in short channel devices. These results can provide a clear direction for fin shape designers in the future.

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Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect

Panchanan

Maity

Baidya

et al. 2023

Silicon

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Performance advantage and energy saving of triangular-shaped FinFETs

Cited by 7 publications

References 3 publications

Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node

Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect

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