Technology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET. For 10–30 nm channel length multigate MOSFETs have been considered as most promising devices and FinFETs are the leading multigate MOSFET devices. Process parameters can be varied to obtain the desired performance of the FinFET device. In this paper, evaluation of on-off current ratio (Ion/Ioff), subthreshold swing (SS) and Drain Induced Barrier Lowering (DIBL) for different process parameters, that is, doping concentration (1015/cm3 to 1018/cm3), oxide thickness (0.5 nm and 1 nm), and fin height (10 nm to 40 nm), has been presented for 20 nm triangular FinFET device. Density gradient model used in design simulation incorporates the considerable quantum effects and provides more practical environment for device simulation. Simulation result shows that fin shape has great impact on FinFET performance and triangular fin shape leads to reduction in leakage current and SCEs. Comparative analysis of simulation results has been investigated to observe the impact of process parameters on the performance of designed FinFET.
Background Studies about health care seeking behaviour and healthcare utilisation give a good insight about factors that may have programmatic and policy implications. In a developing country like India people spend a substantial proportion of their incomes on medical treatment. WHO estimates reveal that every year 25 million households are forced into poverty by illness and the struggle to pay for health care. We explore health care seeking behaviour and related out-of-pocket (OOP) expenditure among urban slum households in Davangere, Karnataka. Methods A cross-sectional study was conducted between March 1st and August 31st, 2015, in urban slums of Davangere. Among 38 slums in Davangere, 22 residential slums formed our sampling frame where a list of houses with under-fives was collected from the Anganwadi registers. In each slum 10 houses were selected through systematic random sampling; thus a total of 220 houses were studied. Data were collected on health care seeking behaviour and expenditure on under-five illnesses. To avoid recall bias, a one-month recall period for any under-five child morbidity was considered. Findings Among 160 under-fives studied, 30% reported illnesses in the past one month. The mean age of the mothers of the under-fives was 26±1.3 years. Majority (81 %) of the mothers belonged to class IV socio economic class (as per
Designing of integrated circuits under low voltage low power condition is becoming an indispensible issue in today's era. Reducing the power consumption and power supply voltage is the key challenge as it makes certain about reliability of device, averts overheating of the circuits and extends the battery for portable electronics, battery powered implantable and wearable medical devices. Small size and light weight devices are in demand in modern span. Various innovative techniques and methods have been suggested and implemented in literature to decrease the power consumption and enhance the speed by changing the base material of the chips from traditional Silicon to III-V material like Gallium Arsenide. Non-conventional techniques have played pivoted role in minimizing the design complexity and drive the power supply voltage towards the threshold voltage of MOS transistors. This paper presents the operation principle, advantages and disadvantages of non-conventional analog circuit design techniques such as Bulk driven technique, Floating gate technique and Quasi Floating gate technique, thus enabling circuit designers to select the proper design technique based on application requirements.
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