PbS Colloidal Quantum Dot Visible-Blind Photodetector for Early Indoor Fire Detection

Iacovo, Andrea De; Venettacci, Carlo; Colace, Lorenzo; Scopa, L.; Foglia, Sabrina

doi:10.1109/jsen.2017.2710301

Cited by 23 publications

(10 citation statements)

References 18 publications

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“…Because CQD based devices reported so far are not reaching such low dark current densities, operational scenarii with high photon flux seem more appropriate. This typically relates to active imaging (Geyer et al, 2013 ), flame detection (Iacovo et al, 2017 ) and biological tissues imaging for which reasonably fast detection is necessary (sub-ms is mandatory and μs is probably a more appropriate target) and already reported (Lhuillier et al, 2013 ). Also note that in the SWIR, room temperature operation or at least above water freezing point has to be achieved to preserve the low-cost character of the device.…”

Section: Discussionmentioning

confidence: 99%

Road Map for Nanocrystal Based Infrared Photodetectors

et al. 2018

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Infrared (IR) sensors based on epitaxially grown semiconductors face two main challenges which are their prohibitive cost and the difficulty to rise the operating temperature. The quest for alternative technologies which will tackle these two difficulties requires the development of new IR active materials. Over the past decade, significant progresses have been achieved. In this perspective, we summarize the current state of the art relative to nanocrystal based IR sensing and stress the main materials, devices and industrial challenges which will have to be addressed over the 5 next years.

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Section: Discussionmentioning

confidence: 99%

Road Map for Nanocrystal Based Infrared Photodetectors

et al. 2018

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“…In fact, if in PD based on InGaAs is possible to achieve extremely low dark current at room temperature (<20 fA), in colloidal NCs based devices currently reported, such dark current are not so low. However, colloidal NCs based PDs have typically faster detection times, then they are usually employed to flame detection [148], night imaging [149] and biological imaging [150] for which detection is mandatory sub-ms sampling times.…”

Section: Hgte and Hgse Nanocristalsmentioning

confidence: 99%

Miniaturized Silicon Photodetectors

Casalino¹

2021

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Two types of single-photon avalanche diodes (SPADs) with different diameters are investigated regarding their avalanche behavior. SPAD type A was designed in standard 0.35-μm complementary metal-oxide-semiconductor (CMOS) including a 12-μm thick pepi-layer with diameters of 50, 100, 200, and 400 μm; and type B was implemented in the high-voltage (HV) line of this process with diameters of 48.2 and 98.2 μm. Each SPAD is wire-bonded to a 0.35-μm CMOS clocked gating chip, which controls charge up to a maximum 6.6-V excess bias, active, and quench phase as well as readout during one clock period. Measurements of the cathode voltage after photon hits at SPAD type A resulted in fall times (80 to 20%) of 10.2 ns for the 50-μm diameter SPAD for an excess bias of 4.2 V and 3.45 ns for the 200-μm diameter device for an excess bias of 4.26 V. For type B, fall times of 8 ns for 48.2-μm diameter and 5.4-V excess bias as well as 2 ns for 98.2-μm diameter and 5.9-V excess bias were determined. In measuring the whole capacitance at the cathode of the SPAD with gating chip connected, the avalanche currents through the detector were calculated. This resulted in peak avalanche currents of, e.g., 1.19 mA for the 100-μm SPAD type A and 1.64 mA for the 98.2-μm SPAD type B for an excess bias of 5 and 4.9 V, respectively.

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“…In fact, if in PD based on InGaAs is possible to achieve extremely low dark current at room temperature (<20 fA), in colloidal NCs based devices currently reported, such dark current are not so low. However, colloidal NCs based PDs have typically faster detection times, then they are usually employed to flame detection [ 148 ], night imaging [ 149 ] and biological imaging [ 150 ] for which detection is mandatory sub-ms sampling times.…”

Section: Colloidal Semiconductormentioning

confidence: 99%

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Dardano

Ferrara

2020

Micromachines

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With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5–10 years, thus drawing a line for future research.

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PbS Colloidal Quantum Dot Visible-Blind Photodetector for Early Indoor Fire Detection

Cited by 23 publications

References 18 publications

Road Map for Nanocrystal Based Infrared Photodetectors

Road Map for Nanocrystal Based Infrared Photodetectors

Miniaturized Silicon Photodetectors

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

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