Road Map for Nanocrystal Based Infrared Photodetectors

Livache, Clément; Martinez, Bertille; Goubet, Nicolas; Ramade, Julien; Lhuillier, Emmanuel

doi:10.3389/fchem.2018.00575

Cited by 57 publications

(66 citation statements)

References 97 publications

(126 reference statements)

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“…38 A significant effort has been conducted to achieve gram scale synthesis for PbS 26,[39][40][41] , but this effort is still lacking for HgTe which has been identified as a major limitation toward industrial transfer of mid-IR NCs. 42 Here, we have been able to develop a procedure which allows the synthesis of 7 g of HgTe NCs out of 100 mL of reaction medium and which used only 50 mL of solvent for two steps of cleaning, see Figure 3a, b and Figure S15. The obtained material, observed by TEM presents similar shape and absorption features as the material synthesized with a reduced quantity of precursors, see Figure 3c.…”

Section: Discussionmentioning

confidence: 99%

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Near- to Long-Wave-Infrared Mercury Chalcogenide Nanocrystals from Liquid Mercury

et al. 2020

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HgTe nanocrystals are currently the most promising colloidal material for infrared detection, combining broadly tunable infrared absorption and photoconductive properties. Current synthesis leads to a limited amount of material and relies on a highly toxic water-soluble form of Hg. Here, we explore the possibility of using Hg thiolate as Hg source and demonstrate that the latter can be formed in situ from liquid Hg. The developed protocol allows large masses (7 g) and highly concentrated (100 g/L) synthesis, which is a step forward for the transfer of this material towards industry. The transport properties of the material have also been investigated and we observe a transition from p to n-type with size. We observe that the threshold of the p to n switch depends on the growth method which enables for a given size of nanocrystal the formation of p-n junction. This work has great potential to design infrared sensor with optimized charge dissociation.

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Section: Discussionmentioning

confidence: 99%

“…It has been previously discussed by Livache et al, 42 that the introduction of a 1 cm 2 large infrared sensor in every car sold in Europe (20 millions/year) will require the synthesis of 50 kg of HgTe nanocrystals. Such amount also includes 90% of waste (from spin coating) at the fabrication steps.…”

Section: Discussionmentioning

confidence: 99%

Near- to Long-Wave-Infrared Mercury Chalcogenide Nanocrystals from Liquid Mercury

et al. 2020

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“…Narrow band gap nanocrystals [1][2][3] are currently generating a strong interest for the design of high performance and low cost infrared sensors in the short-wave (SWIR: up to 1.7 µm) and mid-wave infrared (MWIR : 3-5 µm). 4,5 Recent developments include high detectivity photodiodes, 6 multicolor devices, [7][8][9] demonstration of focal plane arrays 10 and detectors with enhanced light matter coupling. [11][12][13][14] A possible strategy to go beyond the photoconductive geometry relates to phototransistors.…”

Section: Introductionmentioning

confidence: 99%

“…[11][12][13][14] A possible strategy to go beyond the photoconductive geometry relates to phototransistors. [15][16][17] In this case, the field effect transistor (FET) is not used to probe the majority carriers of the film but rather to bring the thin film in an operating point which maximizes the signal to noise ratio, 5 mostly by reducing the dark current.…”

Section: Introductionmentioning

confidence: 99%

Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses

et al. 2019

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The gating of nanocrystal films is currently driven by two approaches: either the use of a dielectric such as SiO2 or the use of electrolyte. SiO2 allows fast bias sweeping over a broad range of temperatures but requires a large operating bias. Electrolytes, thanks to large capacitances, lead to the significant reduction of operating bias but are limited to slow and quasi-room-temperature operation. None of these operating conditions are optimal for narrow-band-gap nanocrystal-based phototransistors, for which the necessary large-capacitance gate has to be combined with low-temperature operation. Here, we explore the use of a LaF3 ionic glass as a high-capacitance gating alternative. We demonstrate for the first time the use of such ionic glasses to gate thin films made of HgTe and PbS nanocrystals. This gating strategy allows operation in the 180 to 300 K range of temperatures with capacitance as high as 1 μF·cm–2. We unveil the unique property of ionic glass gate to enable the unprecedented tunability of both magnitude and dynamics of the photocurrent thanks to high charge-doping capability within an operating temperature window relevant for infrared photodetection. We demonstrate that by carefully choosing the operating gate bias, the signal-to-noise ratio can be improved by a factor of 100 and the time response accelerated by a factor of 6. Moreover, the good transparency of LaF3 substrate allows back-side illumination in the infrared range, which is highly valuable for the design of phototransistors.

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“…They nevertheless present a limited tunability, typically from 800 nm to 3 μm, because of PbS bulk bandgap. Mercury chalcogenides, thanks to their semimetal nature, present a wider tunability from the near IR (1 μm) up to the far IR (100 μm) . This article is dedicated to the recent developments relative to the integration of mercury chalcogenides in photovoltaic devices, especially for the short‐wave (below 2.5 μm) and mid‐wave (3–5 μm) IR.…”

Section: Introductionmentioning

confidence: 99%

Designing Photovoltaic Devices Using HgTe Nanocrystals for Short and Mid‐Wave Infrared Detection

Martinez

Livache

Chu

et al. 2019

Physica Status Solidi (a)

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HgTe nanocrystals offer a unique combination of broadly tunable optical absorption in the infrared from 1 to 100 μm and photoconductive properties. Herein, some of the recent developments related to their integration into photodiodes are discussed. Concepts such as the development of colloidal unipolar barrier, development of ink to achieve strongly absorbing and conductive film, and the recent proposition of intraband photodiode are also discussed.

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Road Map for Nanocrystal Based Infrared Photodetectors

Cited by 57 publications

References 97 publications

Near- to Long-Wave-Infrared Mercury Chalcogenide Nanocrystals from Liquid Mercury

Near- to Long-Wave-Infrared Mercury Chalcogenide Nanocrystals from Liquid Mercury

Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses

Designing Photovoltaic Devices Using HgTe Nanocrystals for Short and Mid‐Wave Infrared Detection

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