Colloidal quantum dots have recently attracted lot of interest in the fabrication of optoelectronic devices due to their unique optical properties and their simple and low cost fabrication. PbS nanocrystals emerged as the most advanced colloidal material for near infrared photodetectors. In this work we report on the fabrication and characterization of PbS colloidal quantum dot photoconductors. In order to make devices suitable for the monolithic integration with silicon electronics, we propose a simple and low cost process for the fabrication of photodetectors and investigate their operation at very low voltage bias. Our photoconductors feature high responsivity and detectivity at 1.3 μm and 1 V bias with maximum values of 30 A/W and 2·1010 cmHz1/2W−1, respectively. Detectivity close to 1011 cmHz1/2W−1 has been obtained resorting to bridge sensor readout.

We report on the noise characterization of photoconductors based on PbS colloidal quantum dots. The devices operate in the near infrared region with peak responsivity exceeding 70 A/W at 1.3 μm at low optical intensity and low voltage bias. The large responsivity, combined with the low dark current of high resistance devices, provides a specific detectivity D* as large as 1011 cm Hz1/2 W−1. The noise characteristics are investigated using noise current spectra measured at different biases both in dark and under optical excitation. The analysis revealed that the noise is clearly dominated by the flicker component up to 100 kHz. The noise performance is investigated at different optical intensities and for different device dimensions and voltage biases.

PbS colloidal quantum dots (QDs) are a promising material for the realization of low-cost, highresponsivity near-infrared photodetectors. Previously reported attempts showed high responsivity but a fast performance decay in air-exposed devices, demanding encapsulation of the photodetectors. Conversely, devices with very high air stability have been demonstrated but the low trap-state density hinders photoconductive gain and reduces overall responsivity. In this paper, photoconductive devices prepared with partially tetrabutylammonium iodide exchanged PbS QDs are presented with enhanced air stability and high responsivity at low voltage, low optical power.

In this letter, we report on high responsivity fire detectors based on PbS colloidal quantum dots photoconductors. The devices operate in the near infrared and are equipped with a visible light silicon filter for wavelength selectivity. Devices are fabricated by a simple, low cost, and silicon compatible process based on drop casting of a ligand exchanged solution of PbS nanoparticles. The photodetectors exhibit responsivity as high as 20 A/W at 1-V bias. We exploit the combination of their high responsivity and spectral response for the development of a novel fire detector able to detect a small flame at a distance exceeding 15 m in ambient illumination

PbS quantum dot narrowband photoconductors employed for the realization of a compact wavelength-meter system.

We report on a novel optical fire detector based on a PbS colloidal quantum dot photodetector. The sensor is realized with a simple, cost effective, drop casting technique. The photodetector is characterized in terms of its electrical characteristics, responsivity and specific detectivity to monochromatic light. We demonstrate effective indoor fire detection at a distance exceeding 20m with a 120 • field of view. We also show a twofold improvement of the detector signal to noise ratio exploiting a short focal lens.

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