Patterning for Plated Heterojunction Cells

Li, Zhongtian; Hsiao, Pei‐Chieh; Zhang, Wei; Chen, Ran; Yu, Yao; Papet, P.; Lennon, Alison

doi:10.1016/j.egypro.2015.03.290

Cited by 29 publications

(23 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was for instance shown that the detrimental impact of plating chemicals on the transparent conductive oxide could be avoided by carefully selecting the baths and implementing some process changes [47]. An innovative and potentially low cost inkjet patterning technology was also presented and implemented in a proof-of-concept heterojunction device [48,49].…”

Section: Ni/cu Plated Contactsmentioning

confidence: 99%

Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Beaucarne¹,

Schubert

Hoornstra

2015

Energy Procedia

View full text Add to dashboard Cite

The 5 th Metallization Workshop took place in Constance, Germany on 20 and 21 October 2014 and provided an overview of research and development in the field of solar cell metallization. Enhanced understanding of contact structure and formation was obtained thanks to new characterization techniques. Great progress in metallization technologies was also reported. Screen printing technology is continuing its trajectory of continuous improvement, notably with fine-line screen printing (linewidth < 50 μm) becoming a reality. Ni/Cu plating technology is also progressing fast, with many of the technical barriers to adoption being successfully removed. Finally, the workshop also highlighted the move towards a module-centric design of solar cell metallization, targeting high performance and low cost at module level.

show abstract

Section: Ni/cu Plated Contactsmentioning

confidence: 99%

Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Beaucarne¹,

Schubert

Hoornstra

2015

Energy Procedia

View full text Add to dashboard Cite

show abstract

“…It is necessary to mask the pattern of grid electrodes for selective plating. One patterning method is non‐photolithography process such as inkjet printing and screen printing resist . It is difficult for the width of finger opening to reach less than 30 µm.…”

Section: Introductionmentioning

confidence: 99%

Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells

Zhang

Chen

et al. 2019

Solar RRL

View full text Add to dashboard Cite

Reducing the production cost of highly efficient silicon heterojunction (SHJ) solar cells is essential for their large‐scale commercialization. Replacing screen printed silver contacts with plated copper is an effective way. However, one needs to deal with the process compatibility without sacrificing the cell performance. In this work, a layer stack of silicon oxide and silicon nitride (SiOx/SiNx) is proposed, serving dual functions of light‐trapping and selective copper plating mask. The SiOx/SiNx stack is prepared by plasma enhanced chemical vapor deposition (PECVD) on a tungsten doped indium oxide (IWO) layer. Optimized SiOx/SiNx/IWO stacks in SHJ solar cells with silver contacts result in excellent anti‐reflection properties and improved external quantum efficiency. A short circuit current density gain of 1.16 mA cm−2 is achieved without the loss in fill factor. This SiOx/SiNx stack is tested as in‐situ deposited selective plating mask for a front‐side copper plating process. An in‐house made light induced plating tool is utilized. A screen printed silver finger is applied as a seed layer for copper plating. The bulk resistivity of Cu/Ag finger reduces to 4.1 E‐6 Ω · cm, which is lower than that of low temperature silver paste (around 6 E‐6 Ω · cm) before copper is plated on it. The dual functions of SiOx/SiNx stack and the process are proven, indicating a good potential for further improving photoelectric properties of SHJ solar cells after well optimization.

show abstract

“…1) Also, a plated copper contact has been applied to the silicon heterojunction (SHJ) solar cells for optical loss reduction and low-cost metallization. [2][3][4][5][6][7][8] Recently, KANEKA have reported a 25.1%-efficiency copperplated SHJ solar cell on a large area (151.9 cm 2 ), which is a world record result without applying an interdigitated back contact. 9) However, the adhesion of a plated copper film has been a problem in the application of silicon solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…[18][19][20] In the application of copper plating metallization to the SHJ solar cells, poor adhesion of the plated copper film to the indium tin oxide (ITO) layer is one of the issues even though Li et al reported that adhesion can be improved after an ITO pretreatment. 8) To improve the adhesion of the ITO and the copper interface, a thin metal seed layer, which is deposited by physical vapor deposition (PVD) or light-induced plating (LIP), has been investigated with some materials such as Ni, Ti, Cr, and Ag. 21) When a seed layer is applied on the ITO layer for better adhesion, contact resistivity (ρ c ) also needs to be considered since a high series resistance degrades the fill factor of solar cells.…”

Section: Introductionmentioning

confidence: 99%

Contact resistivity and adhesion of copper alloy seed layer for copper-plated silicon heterojunction solar cells

Lee

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

To reduce optical loss and contact material cost in silicon heterojunction (SHJ) solar cells, copper plating has been considered as a suitable metallization technique. However, a plated copper contact on indium tin oxide (ITO) generally has low adhesion reliability. For this reason, suitable seed layer materials are required for adhesive copper plating. As a requirement of a suitable seed layer material, contact resistance between the seed and the ITO is also important, as well as the adhesion, since a high series resistance results in a low fill factor. In this work, we applied copper alloy (Cu-X) materials as a seed layer that was deposited by co-evaporating copper with other metals. The contact resistivity (ρ c ) values of the Cu-X seed layer and copper-plated contact with the Cu-X seed layer (Cu-X/Cu) on the ITO layer were evaluated by the transfer length method (TLM). Also, tape tests were carried out to check the adhesion of the Cu-X/Cu contact.

show abstract

Patterning for Plated Heterojunction Cells

Cited by 29 publications

References 6 publications

Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells

Contact resistivity and adhesion of copper alloy seed layer for copper-plated silicon heterojunction solar cells

Contact Info

Product

Resources

About

Patterning for Plated Heterojunction Cells

Cited by 29 publications

References 6 publications

Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Dual‐Function Light‐Trapping: Selective Plating Mask of SiOx/SiNx Stacks for Silicon Heterojunction Solar Cells

Contact resistivity and adhesion of copper alloy seed layer for copper-plated silicon heterojunction solar cells

Contact Info

Product

Resources

About

Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells