Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Beaucarne, G.; Schubert, Gunnar; Hoornstra, Jaap

doi:10.1016/j.egypro.2015.03.282

Cited by 15 publications

(7 citation statements)

References 30 publications

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“…Screen printing has become a standard and mature technology for phosphorous-doped junctions, and the mechanism of current conduction has been thoroughly investigated [8]. On other hand, on boron-doped junctions, screen printing can still present contact resistance and spiking limitations [9]. In addition, excellent results have been achieved with more advanced nickel/copper (Ni/Cu) contacts on n + surfaces [6], [10]- [14] and several toolsets are becoming commercially available [15], although high potential has been demonstrated also on p + silicon [16].…”

Section: Front Versus Rear Emitter Configurationmentioning

confidence: 99%

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

Cornagliotti

Urueña

Aleman

et al. 2015

IEEE J. Photovoltaics

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We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al 2 O 3 and PECVD SiO x . After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al 2 O 3 /SiO x stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm 2 , provided that the Al 2 O 3 thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al 2 O 3 /SiO x passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and V o c above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.

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Section: Front Versus Rear Emitter Configurationmentioning

confidence: 99%

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

Cornagliotti

Urueña

Aleman

et al. 2015

IEEE J. Photovoltaics

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“…In recent years, novel metallization schemes have been proposed to increase cell efficiencies and reduce cost [53]. Due to price pressures in cell manufacturing, there is a growing interest in the ability to replace silver metallization with a copper based alternative [54,55].…”

Section: Emerging Technologiesmentioning

confidence: 99%

Manufacturing metrology for c-Si module reliability and durability Part III: Module manufacturing

Davis

Rodgers

Scardera

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the third and final article in a series dedicated to reviewing each process step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock, crystallization and wafering, cell fabrication, and module manufacturing. The goal of these papers is to identify relevant metrology techniques that can be utilized to improve the quality and durability of the final product. The focus of this article is on the module manufacturing process. The c-Si PV module fabrication process can be divided into three primary areas; (1) stringing and tabbing, (2) lamination, and (3) integration of junction box and bypass diode(s). Each of these processing steps can impact the reliability and durability of PV modules in the field. The ultimate goal of this article is to identify appropriate metrology techniques and characterization methods that can be utilized within a module manufacturing facility to improve the reliability and durability of the final product. Additionally, a gap analysis is carried out to identify areas in need of further research and a discussion is provided that addresses new challenges for advanced materials and emerging technologies.

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“…In silicon technology, a metallic grid is deposited on the cell surface , commonly by screen printing of a silver paste. Such a technique requires high‐temperature treatments and relies on a relatively expensive material.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposited zinc grid as low-cost solar cell front contact

Tsin

Rousset

Bris

et al. 2016

Prog. Photovolt: Res. Appl.

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This paper presents an innovative low-cost electrodeposition process to grow metallic zinc grids as a front contact for Cu (In,Ga)(Se,S) 2 (CIGS) and silicon heterojunction solar cells as an alternative to complex and expensive monolithic integration and silver screen printing techniques respectively. Morphological and electrical properties of the grid have been investigated and compared with a reference evaporated one. High quality and conformal zinc grids have been deposited showing very high growth rates up to 3.3 μm min À1 . Zinc grid is successfully deposited as front electrode for CIGS solar cells that are fabricated by a variety of deposition processes. Efficiency (16.3%) is achieved without antireflection coating on a 0.5 cm 2 co-evaporated absorber and 14.8% on an electrodeposited one. Using electrodeposition for the growth of the doped ZnO film as well, a 14.1% efficiency is demonstrated on an all-wet solar cell only composed of layers deposited by atmospheric methods-from absorber to metallic grid. The process is then applied to a 4.2 cm 2 cell as a first step toward largescale application. Finally, a zinc grid is deposited on a 0.5 cm 2 silicon heterojunction showing a promising 17% efficiency.

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Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Cited by 15 publications

References 30 publications

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

Manufacturing metrology for c-Si module reliability and durability Part III: Module manufacturing

Electrodeposited zinc grid as low-cost solar cell front contact

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Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Cited by 15 publications

References 30 publications

Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2 O3

Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2 O3

Manufacturing metrology for c-Si module reliability and durability Part III: Module manufacturing

Electrodeposited zinc grid as low-cost solar cell front contact

Contact Info

Product

Resources

About

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃